JPS5730371A - Manufacture of insulated gate type field effect transistor - Google Patents

Manufacture of insulated gate type field effect transistor

Info

Publication number
JPS5730371A
JPS5730371A JP10452280A JP10452280A JPS5730371A JP S5730371 A JPS5730371 A JP S5730371A JP 10452280 A JP10452280 A JP 10452280A JP 10452280 A JP10452280 A JP 10452280A JP S5730371 A JPS5730371 A JP S5730371A
Authority
JP
Japan
Prior art keywords
gate
self
respect
region
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10452280A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6346992B2 (enrdf_load_stackoverflow
Inventor
Tadayoshi Enomoto
Toshiyuki Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10452280A priority Critical patent/JPS5730371A/ja
Publication of JPS5730371A publication Critical patent/JPS5730371A/ja
Publication of JPS6346992B2 publication Critical patent/JPS6346992B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP10452280A 1980-07-30 1980-07-30 Manufacture of insulated gate type field effect transistor Granted JPS5730371A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10452280A JPS5730371A (en) 1980-07-30 1980-07-30 Manufacture of insulated gate type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10452280A JPS5730371A (en) 1980-07-30 1980-07-30 Manufacture of insulated gate type field effect transistor

Publications (2)

Publication Number Publication Date
JPS5730371A true JPS5730371A (en) 1982-02-18
JPS6346992B2 JPS6346992B2 (enrdf_load_stackoverflow) 1988-09-20

Family

ID=14382817

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10452280A Granted JPS5730371A (en) 1980-07-30 1980-07-30 Manufacture of insulated gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5730371A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58111372A (ja) * 1981-12-25 1983-07-02 Hitachi Ltd 半導体装置の製造方法
JPS58146989A (ja) * 1982-02-26 1983-09-01 グローリー工業株式会社 硬貨判別方法
US7692239B2 (en) 2003-03-10 2010-04-06 Fuji Electric Device Technology Co., Ltd. MIS-type semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58111372A (ja) * 1981-12-25 1983-07-02 Hitachi Ltd 半導体装置の製造方法
JPS58146989A (ja) * 1982-02-26 1983-09-01 グローリー工業株式会社 硬貨判別方法
US7692239B2 (en) 2003-03-10 2010-04-06 Fuji Electric Device Technology Co., Ltd. MIS-type semiconductor device

Also Published As

Publication number Publication date
JPS6346992B2 (enrdf_load_stackoverflow) 1988-09-20

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