JPS5726471A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5726471A
JPS5726471A JP10164280A JP10164280A JPS5726471A JP S5726471 A JPS5726471 A JP S5726471A JP 10164280 A JP10164280 A JP 10164280A JP 10164280 A JP10164280 A JP 10164280A JP S5726471 A JPS5726471 A JP S5726471A
Authority
JP
Japan
Prior art keywords
electrode pad
gate
pad
gate electrode
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10164280A
Other languages
English (en)
Inventor
Takeshi Takano
Yasuyuki Tokumitsu
Megumi Arai
Hisafumi Okubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10164280A priority Critical patent/JPS5726471A/ja
Publication of JPS5726471A publication Critical patent/JPS5726471A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • H01L29/8124—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate with multiple gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP10164280A 1980-07-24 1980-07-24 Semiconductor device Pending JPS5726471A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10164280A JPS5726471A (en) 1980-07-24 1980-07-24 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10164280A JPS5726471A (en) 1980-07-24 1980-07-24 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5726471A true JPS5726471A (en) 1982-02-12

Family

ID=14306022

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10164280A Pending JPS5726471A (en) 1980-07-24 1980-07-24 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5726471A (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4471238A (en) * 1982-06-01 1984-09-11 Hughes Aircraft Company Current-driven logic circuits
JPS61181170A (ja) * 1985-01-28 1986-08-13 アルカテル　イタリア　ソシエタ　ペル　アチオニ 金属半導体電界効果トランジスタ及びその製造方法
EP0551940A2 (en) * 1992-01-17 1993-07-21 Philips Electronics Uk Limited A semiconductor device comprising a multigate MOSFET
JPH0669100B2 (ja) * 1983-10-28 1994-08-31 ヒューズ・エアクラフト・カンパニー マルチ・ゲート電界効果トランジスタ
WO2012081237A1 (ja) * 2010-12-14 2012-06-21 パナソニック株式会社 半導体装置及びその制御方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4471238A (en) * 1982-06-01 1984-09-11 Hughes Aircraft Company Current-driven logic circuits
JPH0669100B2 (ja) * 1983-10-28 1994-08-31 ヒューズ・エアクラフト・カンパニー マルチ・ゲート電界効果トランジスタ
JPS61181170A (ja) * 1985-01-28 1986-08-13 アルカテル　イタリア　ソシエタ　ペル　アチオニ 金属半導体電界効果トランジスタ及びその製造方法
EP0551940A2 (en) * 1992-01-17 1993-07-21 Philips Electronics Uk Limited A semiconductor device comprising a multigate MOSFET
EP0551940A3 (ja) * 1992-01-17 1994-02-02 Philips Electronics Uk Ltd
WO2012081237A1 (ja) * 2010-12-14 2012-06-21 パナソニック株式会社 半導体装置及びその制御方法

Similar Documents

Publication Publication Date Title
JPS55108775A (en) Semiconductor device
JPS53108392A (en) Semiconductor device
JPS5726471A (en) Semiconductor device
JPS5382179A (en) Field effect transistor
JPS5360582A (en) Semiconductor ingegrated circuit device
JPS5439579A (en) Semiconductor device of field effect type
JPS5346290A (en) Semiconductor device
JPS5219083A (en) Field-effect tansistor
JPS5257786A (en) Field effect transistor
JPS52146569A (en) Semiconductor memory device
JPS5346288A (en) Mis type semiconductor device
JPS56165358A (en) Semiconductor device
JPS539482A (en) Mis semiconductor device and its production
JPS5368986A (en) Mos type transistor
JPS5422785A (en) Mis-type semiconductor memory device and its manufacture
JPS5278389A (en) Semiconductor memory device
JPS52141581A (en) Mos type semiconductor device 7 its manufacture
JPS5313321A (en) Semiconductor memory unit
JPS5369587A (en) Manufacture for semiconductor device
JPS5363985A (en) Semiconductor device
JPS534478A (en) Semiconductor device
JPS52119872A (en) Manufacture of semi-conductor device
JPS5371573A (en) Field effect transistor of isolating gate type
JPS51116685A (en) Semiconductor device
JPS5215253A (en) Semiconductor amplifier