JPS5725723A - Surge absorbing circuit of gto thyristor - Google Patents

Surge absorbing circuit of gto thyristor

Info

Publication number
JPS5725723A
JPS5725723A JP10087380A JP10087380A JPS5725723A JP S5725723 A JPS5725723 A JP S5725723A JP 10087380 A JP10087380 A JP 10087380A JP 10087380 A JP10087380 A JP 10087380A JP S5725723 A JPS5725723 A JP S5725723A
Authority
JP
Japan
Prior art keywords
thyristor
transformer
surge absorbing
diode
gto thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10087380A
Other languages
Japanese (ja)
Other versions
JPS606136B2 (en
Inventor
Keiichiro Yanagida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10087380A priority Critical patent/JPS606136B2/en
Publication of JPS5725723A publication Critical patent/JPS5725723A/en
Publication of JPS606136B2 publication Critical patent/JPS606136B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for dc voltages or currents

Landscapes

  • Protection Of Static Devices (AREA)
  • Power Conversion In General (AREA)
  • Thyristor Switches And Gates (AREA)
  • Electronic Switches (AREA)

Abstract

PURPOSE:To reduce the loss and ensure a highly efficient operation for a surge absorbing circuit of a GTO thyristor, by connecting a feedback transformer in parallel to a surge absorbing diode. CONSTITUTION:When a GTO thyristor 1 is turned off, a capacitor 3 is charged via a diode 2 to prevent an increase of the steep forward voltage which is applied to the thyristor 1. At the same time, the electric charge charged to the capaciror 3 is discharged via the primary winding of a feedback transformer 5 and the thyristor 1, and also the voltage induced at the secondary winding by the current flowing through the primary side of the transformer 5 with the polarity as shown in the diagram is fed back to the power source side via a fedback diode 7 in the forward direction. After this, the residual magnetic flux of the iron core of the transformer 5 is damagnetized by short-circuiting the secondary winding with a reset resistor 6. In other words, the energy charged to the capacitor 3 when the thyristor 1 is off is fed back to the power source side with no consumption to reduce the loss of power.
JP10087380A 1980-07-23 1980-07-23 GTO thyristor surge absorption circuit Expired JPS606136B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10087380A JPS606136B2 (en) 1980-07-23 1980-07-23 GTO thyristor surge absorption circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10087380A JPS606136B2 (en) 1980-07-23 1980-07-23 GTO thyristor surge absorption circuit

Publications (2)

Publication Number Publication Date
JPS5725723A true JPS5725723A (en) 1982-02-10
JPS606136B2 JPS606136B2 (en) 1985-02-15

Family

ID=14285429

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10087380A Expired JPS606136B2 (en) 1980-07-23 1980-07-23 GTO thyristor surge absorption circuit

Country Status (1)

Country Link
JP (1) JPS606136B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57195241U (en) * 1981-06-02 1982-12-10
JPS5863076A (en) * 1981-10-05 1983-04-14 Meidensha Electric Mfg Co Ltd Protection circuit for semiconductor switch element for power
JPS58165658A (en) * 1982-03-26 1983-09-30 Toshiba Corp Power converter
JPS5927636U (en) * 1982-08-16 1984-02-21 株式会社安川電機 Gate turn-off thyristor snubber circuit
JPS5961221A (en) * 1982-09-29 1984-04-07 Toshiba Electric Equip Corp Switching circuit
JPS59165957A (en) * 1983-03-08 1984-09-19 Fuji Electric Co Ltd Snubber circuit of power converter

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57195241U (en) * 1981-06-02 1982-12-10
JPS5863076A (en) * 1981-10-05 1983-04-14 Meidensha Electric Mfg Co Ltd Protection circuit for semiconductor switch element for power
JPH0256032B2 (en) * 1981-10-05 1990-11-29 Meidensha Electric Mfg Co Ltd
JPS58165658A (en) * 1982-03-26 1983-09-30 Toshiba Corp Power converter
JPS5927636U (en) * 1982-08-16 1984-02-21 株式会社安川電機 Gate turn-off thyristor snubber circuit
JPS5961221A (en) * 1982-09-29 1984-04-07 Toshiba Electric Equip Corp Switching circuit
JPH0315846B2 (en) * 1982-09-29 1991-03-04 Toshiba Raitetsuku Kk
JPS59165957A (en) * 1983-03-08 1984-09-19 Fuji Electric Co Ltd Snubber circuit of power converter

Also Published As

Publication number Publication date
JPS606136B2 (en) 1985-02-15

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