JPS5961221A - Switching circuit - Google Patents

Switching circuit

Info

Publication number
JPS5961221A
JPS5961221A JP57170231A JP17023182A JPS5961221A JP S5961221 A JPS5961221 A JP S5961221A JP 57170231 A JP57170231 A JP 57170231A JP 17023182 A JP17023182 A JP 17023182A JP S5961221 A JPS5961221 A JP S5961221A
Authority
JP
Japan
Prior art keywords
capacitor
circuit
transistor
transformer
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57170231A
Other languages
Japanese (ja)
Other versions
JPH0315846B2 (en
Inventor
Keiichi Shimizu
恵一 清水
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Electric Equipment Corp
Toshiba Denzai KK
Original Assignee
Toshiba Electric Equipment Corp
Toshiba Denzai KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Electric Equipment Corp, Toshiba Denzai KK filed Critical Toshiba Electric Equipment Corp
Priority to JP57170231A priority Critical patent/JPS5961221A/en
Publication of JPS5961221A publication Critical patent/JPS5961221A/en
Publication of JPH0315846B2 publication Critical patent/JPH0315846B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0814Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/08146Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in bipolar transistor switches

Landscapes

  • Electronic Switches (AREA)

Abstract

PURPOSE:To improve the composition efficiency of the whole switching circuit using a semiconductor by supplying the charge of a capacitor in a turn off characteristics improving circuit to the input or output side. CONSTITUTION:Input power applied between input terminals I1, I2 charges the capacitor C2 and is applied to output terminals O1, O2 through a diode D1 and a reactance L by switching a transistor (TR) Qo. The charge accumulated in the capacitor C2 at the time turning off the TR Q0 is discharged through the primary winding of a transformer Tr and the generated secondary winding induced voltage is supplied to the input or output circuit side.

Description

【発明の詳細な説明】 本発明は半導体素子を用いたスイッチング回路に関する
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a switching circuit using semiconductor elements.

例えばスイッチングレギュレータ等におけるトランジス
タのスイッチングを高周波化するとトランジスタにおけ
るスイッチングイH失が増大し、眠力利甲効率が低下す
る。そこで従来、第1図に示すようにスイッチングトラ
ンジスタ。。に並列に、ダイオードD。と抵抗Rとの連
列回路にコンデンサC8を直列接続しCなるスイッチン
グ特性改讐回路を設けてトランジスタQ。のターンオフ
特性を改讐−[るようにしている。すなわち、トランジ
スタQ。のターンオフによりトランジスタQ。の’yv
クタ・エミッタ間に刃口わる電工をダイオードDo  
を介してコンデンサC6IC元市することにより緩衝し
、この光亀可荷をトランジスタQ。がターンオンしたと
きに抵抗Rを介して放電するようにしている。
For example, when the switching frequency of a transistor in a switching regulator or the like is increased, the switching power loss in the transistor increases, and the sleep power efficiency decreases. Therefore, conventionally, a switching transistor is used as shown in FIG. . In parallel with, diode D. A capacitor C8 is connected in series with a series circuit of the resistor R and a switching characteristic modification circuit C is provided to form a transistor Q. We are trying to improve the turn-off characteristics of That is, transistor Q. transistor Q by turning off. 'yv
Do the electrician with a diode between the cutter and the emitter.
Buffer this light by passing the capacitor C6IC through the transistor Q. When the resistor R is turned on, discharge is caused through the resistor R.

しかしながら、この回路ではスイッチングの都度抵抗R
による電力消費が行われ、この分電カ利用効率が患い。
However, in this circuit, the resistance R
As a result, the efficiency of using this distributed power suffers.

本発明は上述の点を考慮してなされ定もので、トランジ
スタのコレクタ・エミッタ間に並列接げされたターンオ
フ特性改善回路におけるコンデンサの光電電荷を、入力
側1もしくに出力側に供給して利用するスイッチング回
路を提供するものである。
The present invention has been made in consideration of the above points, and supplies the photoelectric charge of a capacitor in a turn-off characteristic improvement circuit connected in parallel between the collector and emitter of a transistor to the input side 1 or the output side. This provides a switching circuit for use.

以下第2図乃至第5図を参照して本発明の一実施例を説
明1−る。
An embodiment of the present invention will be described below with reference to FIGS. 2 to 5.

第2図は本発明の基本的宿成を示しTこもので、第1図
の回路における抵抗Rに代えてトランス°r とコンデ
ンサC1との偵列回路を設けたものであり、他の第1図
と同一符号は同−要ネを意味する。
Figure 2 shows the basic structure of the present invention, in which the resistor R in the circuit of Figure 1 is replaced by a reconnaissance circuit consisting of a transformer and a capacitor C1. The same reference numerals as in the figure mean the same key points.

この回路において、トランジスタ九 がターンオフする
と、ダイオードD。を弁してコンデンサCoが光電され
ることに前述の通りである。次いで、トランジスタQ 
がターンオンするとコンデンサC8の光電電荷はトラン
スTr  の1次巻組を介してコンデンサC1に流入し
、トランスTr  の2次巻線に出力を生じる。このト
ランスTr  の2次出力をトランジスタスイッチング
回路の入力側もしくけ出力l111に供給する。
In this circuit, when transistor 9 turns off, diode D turns off. As mentioned above, the capacitor Co is photoelectrically charged by the valve. Next, transistor Q
When the capacitor C8 is turned on, the photoelectric charge of the capacitor C8 flows into the capacitor C1 via the primary winding set of the transformer Tr, and an output is generated in the secondary winding of the transformer Tr. The secondary output of this transformer Tr is supplied to the input side of the transistor switching circuit and to the output l111.

第3図乃至第5図は伺れもその具体的回路構成を示して
いる。
3 to 5 show the specific circuit configuration.

まず第31菌は降圧形レギュレータとして構成したもの
で、入力端子I、、 I2 からの入力を降圧して出力
端子01,02 に送出するもので、入力端子I、、 
I2 間にh見られた入力電力はコンデンサC2を光電
すると共にトランジスタQ。のスイッチングによりダイ
オードD、およびリアクタLを介して出力端子0.、0
2 に与えられる。出力車、圧げトランジスタQ。のス
イッチングデユーティ比によって定まる。ダイオードD
3は目II述の1由りトランジスタQ。のオフ時にトラ
ンスTr  の2次巻線に生じた直圧をダイオードD2
、リアクタLと共に図示しない負荷に結電する電路を形
成てるものである。
First, the 31st bacteria is configured as a step-down type regulator, which steps down the input from input terminals I, I2 and sends it to output terminals 01 and 02.
The input power seen between I2 and photovoltaic capacitor C2 as well as transistor Q. Due to the switching of output terminal 0 through diode D and reactor L. ,0
2 is given. Output vehicle, compressed transistor Q. It is determined by the switching duty ratio of Diode D
3 is the transistor Q described in Section II. The direct pressure generated in the secondary winding of the transformer Tr when the transformer is turned off is connected to the diode D2.
, together with the reactor L, form an electric path that connects to a load (not shown).

次に第4図に昇圧形レギュV−夕として構成したもので
、トランジスタ9 がターンオシてるとそのオン期間中
にリアクタしに蓄積されたエネルギが入力端子I、、1
2  間のkK/fVc重畳してダイオードD4 を介
し出力端子0..02 に親れるつこのトキトランスT
 の2次巻組に生じた田、田も重畳され、竹田効果を高
M)る。コンデンサC2は平滑用1/fi挿入さI1て
いる。
Next, as shown in FIG. 4, the boost type regulator V-1 is configured, and when the transistor 9 is turned on, the energy accumulated in the reactor during its on period is transferred to the input terminals I, , 1.
2, kK/fVc is superimposed between 0.2 and output terminal 0.2 through diode D4. .. 02 Tokitrans T
The fields and fields that occur in the secondary winding set are also superimposed, increasing the Takeda effect. The capacitor C2 has a smoothing 1/fi inserted I1.

さらに第51!&lU反転形レギュレータとして〔tη
成したもので、トランジスタQ。がターンオフするとそ
のオン期間中にリアクタしに蓄侍されにエネルギがダイ
オードD4.D2 によってイまる方向に放出さ)する
。このときの出力端子01.02 のIfi’、 jE
極性が入力端子I、、 I、のそれと逆である。そして
、トランスT の2次巻線に生じた削、圧が出力屯田に
重畳される。コンデンサC2に第4図同様平滑用である
Furthermore, the 51st! &lU As an inverting regulator [tη
This is the transistor Q. When turned off, energy is stored in the reactor during its on period and is transferred to diode D4. D2 (released in the right direction). Ifi' of output terminal 01.02 at this time, jE
The polarity is opposite to that of input terminals I,, I,. Then, the stress generated in the secondary winding of the transformer T is superimposed on the output voltage. The capacitor C2 is for smoothing as in FIG.

上記実施1列ではトランジスタの実施例を示したが、サ
イリスタによる回路にも本発明を適用することができる
Although the embodiment 1 column above shows an embodiment using a transistor, the present invention can also be applied to a circuit using a thyristor.

本発明は上述のように、スイッチングトランジスタのタ
ーンオフ時にコンデンサに蓄え1こiK 荷’jcスイ
ッチングトランジスタのターンオン時にトランスの1次
@線を介して放電し2仄巻憚誘起鑞圧全入力回路」11
あるいは出力回路1111に供給−リーるようにし1こ
Tこめ、従来の仁の神回路で(−r、抵抗により消費さ
せていTこb1力を有効利用1−ろことプバでき、トラ
ンジスタスイッチング回路全体の総合効也介向上するこ
とができる。
As described above, the present invention stores 1 load in the capacitor when the switching transistor is turned off, and discharges it through the primary wire of the transformer when the switching transistor turns on, resulting in 2 winding induced free pressure in the full input circuit.
Alternatively, the output circuit 1111 can be supplied to the output circuit 1111 so that it is leaked, and in the conventional Jin-no-Kami circuit (-r, the power consumed by the resistor can be effectively utilized), and the transistor switching circuit The overall overall effectiveness can also be improved.

【図面の簡単な説明】[Brief explanation of drawings]

第1図に従来のトランジスタスイッチング回路用ターン
オフ特性改善回路を示す1ンl、第2図に本発明の井本
的回路借成を示す図、第3(ロ)乃至第5図は各挿スイ
ッチングレギュレータに本発明回路を+11込んだ回路
を示す図である。 Qo・・・ス・イツアングトランジスタ、D・・・ダイ
オード、C・・・コンデンサ、L・・・リアクタ、T・
・・トランス。
Fig. 1 shows a conventional turn-off characteristic improvement circuit for transistor switching circuits, Fig. 2 shows Imoto's circuit arrangement of the present invention, and Figs. It is a diagram showing a circuit in which the circuit of the present invention is added to +11. Qo...Suitable transistor, D...Diode, C...Capacitor, L...Reactor, T...
··Trance.

Claims (1)

【特許請求の範囲】[Claims] 半導体スイッチング素子に、ダイオードと第1のコンデ
ンサの直列回路を並列接続すると共に前記ダイオードと
並列にトランスの1次巻線と第2のコンデンサとの的列
回路を挿入してなり、前記素子のターンオフ時に前記ダ
イオードを介して前記第1のコンデンサに光直し、仄い
で前記素子がターンオンしたときに前記第1のコンデン
サの光電電荷を前記トランスの1次巻線を介して前記第
2のコンデンサに移し、前記トランスの2次巻待に生じ
に電工を半導体スイッチング素子の入力側あるいに出力
(fillに供給するようにしたトランジスタスイッチ
ング回路。
A series circuit of a diode and a first capacitor is connected in parallel to a semiconductor switching element, and a series circuit of a primary winding of a transformer and a second capacitor is inserted in parallel with the diode, and the element is turned off. When the device is turned on, the photoelectric charge of the first capacitor is transferred to the second capacitor via the primary winding of the transformer. , a transistor switching circuit configured to supply electric power to the input side or output (fill) of a semiconductor switching element while waiting for the secondary winding of the transformer.
JP57170231A 1982-09-29 1982-09-29 Switching circuit Granted JPS5961221A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57170231A JPS5961221A (en) 1982-09-29 1982-09-29 Switching circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57170231A JPS5961221A (en) 1982-09-29 1982-09-29 Switching circuit

Publications (2)

Publication Number Publication Date
JPS5961221A true JPS5961221A (en) 1984-04-07
JPH0315846B2 JPH0315846B2 (en) 1991-03-04

Family

ID=15901091

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57170231A Granted JPS5961221A (en) 1982-09-29 1982-09-29 Switching circuit

Country Status (1)

Country Link
JP (1) JPS5961221A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56168432A (en) * 1980-05-29 1981-12-24 Toshiba Corp Converter
JPS5725723A (en) * 1980-07-23 1982-02-10 Toshiba Corp Surge absorbing circuit of gto thyristor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56168432A (en) * 1980-05-29 1981-12-24 Toshiba Corp Converter
JPS5725723A (en) * 1980-07-23 1982-02-10 Toshiba Corp Surge absorbing circuit of gto thyristor

Also Published As

Publication number Publication date
JPH0315846B2 (en) 1991-03-04

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