JPS5724570A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5724570A
JPS5724570A JP9968580A JP9968580A JPS5724570A JP S5724570 A JPS5724570 A JP S5724570A JP 9968580 A JP9968580 A JP 9968580A JP 9968580 A JP9968580 A JP 9968580A JP S5724570 A JPS5724570 A JP S5724570A
Authority
JP
Japan
Prior art keywords
electrode
capacitor
gain
source
leads
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9968580A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6241420B2 (enrdf_load_stackoverflow
Inventor
Masahiro Hayakawa
Shizuka Jodai
Yutaka Hirano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9968580A priority Critical patent/JPS5724570A/ja
Publication of JPS5724570A publication Critical patent/JPS5724570A/ja
Publication of JPS6241420B2 publication Critical patent/JPS6241420B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/80FETs having rectifying junction gate electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched

Landscapes

  • Microwave Amplifiers (AREA)
  • Junction Field-Effect Transistors (AREA)
JP9968580A 1980-07-21 1980-07-21 Semiconductor device Granted JPS5724570A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9968580A JPS5724570A (en) 1980-07-21 1980-07-21 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9968580A JPS5724570A (en) 1980-07-21 1980-07-21 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5724570A true JPS5724570A (en) 1982-02-09
JPS6241420B2 JPS6241420B2 (enrdf_load_stackoverflow) 1987-09-02

Family

ID=14253887

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9968580A Granted JPS5724570A (en) 1980-07-21 1980-07-21 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5724570A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01153823U (enrdf_load_stackoverflow) * 1988-04-18 1989-10-23
JP5181424B2 (ja) * 2006-03-28 2013-04-10 富士通株式会社 高出力増幅器

Also Published As

Publication number Publication date
JPS6241420B2 (enrdf_load_stackoverflow) 1987-09-02

Similar Documents

Publication Publication Date Title
JPS5791542A (en) High frequency transistor device
JPS5724570A (en) Semiconductor device
JPS55138264A (en) Microwave integrated circuit package
JPS55151372A (en) Ultrahigh frequency semiconductor device
JPS5684017A (en) High frequency hybrid integrated circuit
GB1094010A (en) Improved inductive reactance circuit
JPS5419365A (en) High frequency high output transistor
JPS53132249A (en) Integrated circuit for microwave transistor amplifier
JPS5762547A (en) Semiconductor device
JPS5676614A (en) High frequency hybrid integrated circuit
JPS54101249A (en) Complementary mosfet amplifying circuit
JPS56130959A (en) Hybrid integrated circuit device
JPS5255476A (en) Semiconductor device
GB1532806A (en) Microwave active resonant circuits
JPS55127705A (en) Shunt feedback type microwave oscillator
JPS51136133A (en) High frequency inverter
JPS5582515A (en) Transistor amplifier
JPS57113261A (en) Semiconductor device
JPS5439551A (en) Matching circuit of microwave transistor
JPS5698875A (en) Field effect transistor device
JPS56147461A (en) Semiconductor device
JPS55125654A (en) Transistor device
JPS6447108A (en) Inner matching type high output transistor
JPS53136463A (en) Amplifying circuit
JPS5484453A (en) Microwave integrated circuit