JPS5676614A - High frequency hybrid integrated circuit - Google Patents

High frequency hybrid integrated circuit

Info

Publication number
JPS5676614A
JPS5676614A JP15544279A JP15544279A JPS5676614A JP S5676614 A JPS5676614 A JP S5676614A JP 15544279 A JP15544279 A JP 15544279A JP 15544279 A JP15544279 A JP 15544279A JP S5676614 A JPS5676614 A JP S5676614A
Authority
JP
Japan
Prior art keywords
frequency band
integrated circuit
high frequency
hybrid integrated
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15544279A
Other languages
Japanese (ja)
Inventor
Michio Irie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP15544279A priority Critical patent/JPS5676614A/en
Publication of JPS5676614A publication Critical patent/JPS5676614A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/191—Tuned amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Microwave Amplifiers (AREA)

Abstract

PURPOSE:To amplify the desired frequency band only, by providing HPF through the signal in desired frequency band with an input circuit. CONSTITUTION:An HPF10 is connected, consisting of coils 7, 8 and a capacitor 9, between an input terminal 2 and a matching circuit 6. With the circuit constitution like this, in the frequency band less than objective frequency band, the gain can remarkably be reduced. By constituting the device through the use of high frequency hybrid integrated circuit, the instability of operation can be rejected and if the frequency components less than the objective frequencies are included in the input signal, the components can remarkably be attenuated and the unnecessary radiation from the device can be made less.
JP15544279A 1979-11-27 1979-11-27 High frequency hybrid integrated circuit Pending JPS5676614A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15544279A JPS5676614A (en) 1979-11-27 1979-11-27 High frequency hybrid integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15544279A JPS5676614A (en) 1979-11-27 1979-11-27 High frequency hybrid integrated circuit

Publications (1)

Publication Number Publication Date
JPS5676614A true JPS5676614A (en) 1981-06-24

Family

ID=15606116

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15544279A Pending JPS5676614A (en) 1979-11-27 1979-11-27 High frequency hybrid integrated circuit

Country Status (1)

Country Link
JP (1) JPS5676614A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5894210A (en) * 1981-11-28 1983-06-04 Mitsubishi Electric Corp Internal matching type high-frequency transistor
JPS58162112A (en) * 1982-03-23 1983-09-26 Nec Corp Monolithic integrated circuit amplifier
JPS58162111A (en) * 1982-03-23 1983-09-26 Nec Corp Monolithic transistor amplifier

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5894210A (en) * 1981-11-28 1983-06-04 Mitsubishi Electric Corp Internal matching type high-frequency transistor
JPS58162112A (en) * 1982-03-23 1983-09-26 Nec Corp Monolithic integrated circuit amplifier
JPS58162111A (en) * 1982-03-23 1983-09-26 Nec Corp Monolithic transistor amplifier
JPH0457124B2 (en) * 1982-03-23 1992-09-10 Nippon Electric Co
JPH0552086B2 (en) * 1982-03-23 1993-08-04 Nippon Electric Co

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