JPS5724558A - Semicondctor device - Google Patents
Semicondctor deviceInfo
- Publication number
- JPS5724558A JPS5724558A JP10020080A JP10020080A JPS5724558A JP S5724558 A JPS5724558 A JP S5724558A JP 10020080 A JP10020080 A JP 10020080A JP 10020080 A JP10020080 A JP 10020080A JP S5724558 A JPS5724558 A JP S5724558A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- grooves
- type
- etching
- sio2
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 238000005530 etching Methods 0.000 abstract 4
- 238000000034 method Methods 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000007788 liquid Substances 0.000 abstract 2
- 239000008188 pellet Substances 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
Landscapes
- Bipolar Transistors (AREA)
- Thyristors (AREA)
- Weting (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10020080A JPS5724558A (en) | 1980-07-22 | 1980-07-22 | Semicondctor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10020080A JPS5724558A (en) | 1980-07-22 | 1980-07-22 | Semicondctor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5724558A true JPS5724558A (en) | 1982-02-09 |
| JPH0140505B2 JPH0140505B2 (enrdf_load_stackoverflow) | 1989-08-29 |
Family
ID=14267653
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10020080A Granted JPS5724558A (en) | 1980-07-22 | 1980-07-22 | Semicondctor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5724558A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109309001A (zh) * | 2017-07-26 | 2019-02-05 | 天津环鑫科技发展有限公司 | 一种采用印刷工艺制作gpp芯片的方法 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06342902A (ja) * | 1993-06-01 | 1994-12-13 | Komatsu Ltd | 高耐圧半導体装置 |
-
1980
- 1980-07-22 JP JP10020080A patent/JPS5724558A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109309001A (zh) * | 2017-07-26 | 2019-02-05 | 天津环鑫科技发展有限公司 | 一种采用印刷工艺制作gpp芯片的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0140505B2 (enrdf_load_stackoverflow) | 1989-08-29 |
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