JPS5724553A - Resin sealed semiconductor device - Google Patents

Resin sealed semiconductor device

Info

Publication number
JPS5724553A
JPS5724553A JP9868180A JP9868180A JPS5724553A JP S5724553 A JPS5724553 A JP S5724553A JP 9868180 A JP9868180 A JP 9868180A JP 9868180 A JP9868180 A JP 9868180A JP S5724553 A JPS5724553 A JP S5724553A
Authority
JP
Japan
Prior art keywords
novolak
resin
type
epoxi
acid anhydride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9868180A
Other languages
Japanese (ja)
Other versions
JPS5750065B2 (en
Inventor
Hirotoshi Iketani
Akiko Hatanaka
Shiyuichi Suzuki
Moriyasu Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP9868180A priority Critical patent/JPS5724553A/en
Publication of JPS5724553A publication Critical patent/JPS5724553A/en
Publication of JPS5750065B2 publication Critical patent/JPS5750065B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED

Abstract

PURPOSE:To obtain a semiconductor element with excellent resistance to heat and high-temperature electrical characteristics by using resin materials, as sealing agent, composed of one or more hardener of selected from Novolak-type epoxi resin, Novolak-type phenol resin and acid anhydride and an appropriate hardening catalyst. CONSTITUTION:A semicondutor device is sealed by means of a resin materials composed of three elements, which an Novolak-type epoxi resin of epoxi equivalent of 170-300, more than one kind of hardeners selected from Novolak-type phenol resin and acid anhydride and a hardening catalyst composed of bataine type adduct produced by addition reaction of a compound with pi bond with third organic phosphine, the semiconductor device is sealed. It is recommended to use phthal anhydride as acid anhydride, and carbon bisulfide, carbon biselenate and malein anhydride as hardening catalyst. If necessary, inorganic filling-up material such as quartz glass powder may be added.
JP9868180A 1980-07-21 1980-07-21 Resin sealed semiconductor device Granted JPS5724553A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9868180A JPS5724553A (en) 1980-07-21 1980-07-21 Resin sealed semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9868180A JPS5724553A (en) 1980-07-21 1980-07-21 Resin sealed semiconductor device

Publications (2)

Publication Number Publication Date
JPS5724553A true JPS5724553A (en) 1982-02-09
JPS5750065B2 JPS5750065B2 (en) 1982-10-25

Family

ID=14226247

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9868180A Granted JPS5724553A (en) 1980-07-21 1980-07-21 Resin sealed semiconductor device

Country Status (1)

Country Link
JP (1) JPS5724553A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5943017A (en) * 1982-09-03 1984-03-09 Toshiba Corp Epoxy resin composition and resin-sealed semiconductor device
US5549719A (en) * 1990-11-14 1996-08-27 Minnesota Mining And Manufacturing Company Coated abrasive having an overcoating of an epoxy resin coatable from water
US5556437A (en) * 1990-11-14 1996-09-17 Minnesota Mining And Manufacturing Company Coated abrasive having an overcoating of an epoxy resin coatable from water

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5943017A (en) * 1982-09-03 1984-03-09 Toshiba Corp Epoxy resin composition and resin-sealed semiconductor device
US5549719A (en) * 1990-11-14 1996-08-27 Minnesota Mining And Manufacturing Company Coated abrasive having an overcoating of an epoxy resin coatable from water
US5556437A (en) * 1990-11-14 1996-09-17 Minnesota Mining And Manufacturing Company Coated abrasive having an overcoating of an epoxy resin coatable from water

Also Published As

Publication number Publication date
JPS5750065B2 (en) 1982-10-25

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