JPS5724541A - Preparation of metal oxide semiconductor - Google Patents

Preparation of metal oxide semiconductor

Info

Publication number
JPS5724541A
JPS5724541A JP9952780A JP9952780A JPS5724541A JP S5724541 A JPS5724541 A JP S5724541A JP 9952780 A JP9952780 A JP 9952780A JP 9952780 A JP9952780 A JP 9952780A JP S5724541 A JPS5724541 A JP S5724541A
Authority
JP
Japan
Prior art keywords
dioxide
thin
film
tantalum
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9952780A
Other languages
Japanese (ja)
Inventor
Yoshihiko Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9952780A priority Critical patent/JPS5724541A/en
Publication of JPS5724541A publication Critical patent/JPS5724541A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

PURPOSE:To increase specific permittivity and make an IC compact by a method wherein a thin film of non-fusible metal such as Ta, Hf and Zr is allowed to stick onto a dioxide film on a semiconductor substrate and then the substrate is heated to convert these films into a thin oxide film containing a semiconductor component and a metal component. CONSTITUTION:A thin tantalum film 34 which is 50-200Angstrom thick is attached by means of D.C. double-pole spattering onto a dioxide Si thin film 33 formed on a P type Si substrate 31 containing dioxide Si 32. Since a tantalum atom that is provided with kinetic energy can penetrate the dioxide Si thin films 32, 33 located as deep as 100Angstrom , the region of the thin film 33 becomes that of a mixture of dioxide Si and tantalum. This region is formed in the specified shape, before being treated with heat. Then the thin films 34, 33 are converted into an oxide 33' which is a mixture of tantalum and Si 500Angstrom thick. By so doing, this makes it possible to readily obtain a compact MOSFET transistor having a metal oxide thin film with a larger specific dielectric constant.
JP9952780A 1980-07-21 1980-07-21 Preparation of metal oxide semiconductor Pending JPS5724541A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9952780A JPS5724541A (en) 1980-07-21 1980-07-21 Preparation of metal oxide semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9952780A JPS5724541A (en) 1980-07-21 1980-07-21 Preparation of metal oxide semiconductor

Publications (1)

Publication Number Publication Date
JPS5724541A true JPS5724541A (en) 1982-02-09

Family

ID=14249695

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9952780A Pending JPS5724541A (en) 1980-07-21 1980-07-21 Preparation of metal oxide semiconductor

Country Status (1)

Country Link
JP (1) JPS5724541A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3446643A1 (en) * 1983-12-20 1985-06-27 Mitsubishi Denki K.K., Tokio/Tokyo METHOD FOR PRODUCING SEMICONDUCTOR ELEMENTS

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3446643A1 (en) * 1983-12-20 1985-06-27 Mitsubishi Denki K.K., Tokio/Tokyo METHOD FOR PRODUCING SEMICONDUCTOR ELEMENTS

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