JPS5723242A - Manufacturing of semiconductor device - Google Patents
Manufacturing of semiconductor deviceInfo
- Publication number
- JPS5723242A JPS5723242A JP9691580A JP9691580A JPS5723242A JP S5723242 A JPS5723242 A JP S5723242A JP 9691580 A JP9691580 A JP 9691580A JP 9691580 A JP9691580 A JP 9691580A JP S5723242 A JPS5723242 A JP S5723242A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- etching
- constitution
- vapor deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To improve the life and reliability of an electrode distribution structure made of Al by applying on a whole surface of a wafer where electrode distribution layer of Al is formed vanadium (V) with vapor deposition, applying heat treatment, alloying and removing unreacted V. CONSTITUTION:Contact holes are provided in an oxide film 2 on an Si substrate 1 forming an element, to make Al electrode wiring 3. A V film 4 is applied on the whole surface by vapor deposition to a thickness of about 1,000Angstrom , which is then subjected to a thermal treatment of 450 deg.C for about 30min in a gas consisting of N2 90% and H2 10% to form an alloy layer 5 on the Al layer 3. An ohmic contact occurs between the Al and the substrate simultaneously. A 15sec etching is effected with an etching solution consisting of 15-25 parts of nitric acid and 1pt. of hydrofluoric acid to remove unreacted V film 4, thereby to form electrode wiring layer 6 covered by V-alloy layer 5. This constitution will control degradation due to electric etching and electromigration while reducing the occurrence of hill-rock after the heat treatment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9691580A JPS5723242A (en) | 1980-07-17 | 1980-07-17 | Manufacturing of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9691580A JPS5723242A (en) | 1980-07-17 | 1980-07-17 | Manufacturing of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5723242A true JPS5723242A (en) | 1982-02-06 |
Family
ID=14177649
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9691580A Pending JPS5723242A (en) | 1980-07-17 | 1980-07-17 | Manufacturing of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5723242A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6064452A (en) * | 1983-06-06 | 1985-04-13 | フエアチアイルド カメラ アンド インストルメント コ−ポレ−シヨン | Aluminum mutual connector with copper |
-
1980
- 1980-07-17 JP JP9691580A patent/JPS5723242A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6064452A (en) * | 1983-06-06 | 1985-04-13 | フエアチアイルド カメラ アンド インストルメント コ−ポレ−シヨン | Aluminum mutual connector with copper |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3493820A (en) | Airgap isolated semiconductor device | |
| US3585461A (en) | High reliability semiconductive devices and integrated circuits | |
| US4428796A (en) | Adhesion bond-breaking of lift-off regions on semiconductor structures | |
| US3632436A (en) | Contact system for semiconductor devices | |
| US3454835A (en) | Multiple semiconductor device | |
| US5272107A (en) | Manufacture of silicon carbide (SiC) metal oxide semiconductor (MOS) device | |
| JPS5723242A (en) | Manufacturing of semiconductor device | |
| US4040893A (en) | Method of selective etching of materials utilizing masks of binary silicate glasses | |
| JPS6132572A (en) | Semiconductor device | |
| JPS60176231A (en) | Electrode forming process of compound semiconductor element | |
| JPH0224030B2 (en) | ||
| JPS6250974B2 (en) | ||
| JPS5918632A (en) | Formation of electrode of semiconductor device | |
| JPS57208169A (en) | Semiconductor device and manufacture thereof | |
| JPS5478659A (en) | Menufacture of semiconductor device | |
| JPS5776832A (en) | Method for forming palladium silicide | |
| JPS5925245A (en) | Manufacture of semiconductor device | |
| JPS6279625A (en) | Manufacture of semiconductor device | |
| KR970003542A (en) | Manufacturing method of semiconductor device | |
| JPS5671938A (en) | Manufacture of semiconductor device | |
| JPS54103674A (en) | Production of semiconductor device | |
| JPS5792849A (en) | Manufacture of semiconductor device | |
| JPS5772343A (en) | Manufacture of semionductor device | |
| JPS59147431A (en) | Formation of electrode | |
| JPS6410647A (en) | Manufacture of semiconductor device |