JPS5723231A - Formation of thin film - Google Patents

Formation of thin film

Info

Publication number
JPS5723231A
JPS5723231A JP9889180A JP9889180A JPS5723231A JP S5723231 A JPS5723231 A JP S5723231A JP 9889180 A JP9889180 A JP 9889180A JP 9889180 A JP9889180 A JP 9889180A JP S5723231 A JPS5723231 A JP S5723231A
Authority
JP
Japan
Prior art keywords
film
thin film
minute
ions
plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9889180A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6217854B2 (enrdf_load_stackoverflow
Inventor
Yasutoshi Suzuki
Kunihiko Hara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Priority to JP9889180A priority Critical patent/JPS5723231A/ja
Publication of JPS5723231A publication Critical patent/JPS5723231A/ja
Publication of JPS6217854B2 publication Critical patent/JPS6217854B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
JP9889180A 1980-07-18 1980-07-18 Formation of thin film Granted JPS5723231A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9889180A JPS5723231A (en) 1980-07-18 1980-07-18 Formation of thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9889180A JPS5723231A (en) 1980-07-18 1980-07-18 Formation of thin film

Publications (2)

Publication Number Publication Date
JPS5723231A true JPS5723231A (en) 1982-02-06
JPS6217854B2 JPS6217854B2 (enrdf_load_stackoverflow) 1987-04-20

Family

ID=14231751

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9889180A Granted JPS5723231A (en) 1980-07-18 1980-07-18 Formation of thin film

Country Status (1)

Country Link
JP (1) JPS5723231A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5986227A (ja) * 1982-11-10 1984-05-18 Toshiba Corp ガラス被膜の形成方法
JPS6229144A (ja) * 1985-07-29 1987-02-07 Shinetsu Ishiei Kk スパツタリング用タ−ゲツト
US5227314A (en) * 1989-03-22 1993-07-13 At&T Bell Laboratories Method of making metal conductors having a mobile inn getterer therein

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5986227A (ja) * 1982-11-10 1984-05-18 Toshiba Corp ガラス被膜の形成方法
JPS6229144A (ja) * 1985-07-29 1987-02-07 Shinetsu Ishiei Kk スパツタリング用タ−ゲツト
US5227314A (en) * 1989-03-22 1993-07-13 At&T Bell Laboratories Method of making metal conductors having a mobile inn getterer therein

Also Published As

Publication number Publication date
JPS6217854B2 (enrdf_load_stackoverflow) 1987-04-20

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