JPS5723231A - Formation of thin film - Google Patents
Formation of thin filmInfo
- Publication number
- JPS5723231A JPS5723231A JP9889180A JP9889180A JPS5723231A JP S5723231 A JPS5723231 A JP S5723231A JP 9889180 A JP9889180 A JP 9889180A JP 9889180 A JP9889180 A JP 9889180A JP S5723231 A JPS5723231 A JP S5723231A
- Authority
- JP
- Japan
- Prior art keywords
- film
- thin film
- minute
- ions
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title abstract 4
- 230000015572 biosynthetic process Effects 0.000 title 1
- 239000010408 film Substances 0.000 abstract 4
- 150000002500 ions Chemical class 0.000 abstract 3
- 239000000843 powder Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000002349 favourable effect Effects 0.000 abstract 2
- 238000004544 sputter deposition Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 238000011109 contamination Methods 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000005247 gettering Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9889180A JPS5723231A (en) | 1980-07-18 | 1980-07-18 | Formation of thin film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9889180A JPS5723231A (en) | 1980-07-18 | 1980-07-18 | Formation of thin film |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5723231A true JPS5723231A (en) | 1982-02-06 |
JPS6217854B2 JPS6217854B2 (enrdf_load_stackoverflow) | 1987-04-20 |
Family
ID=14231751
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9889180A Granted JPS5723231A (en) | 1980-07-18 | 1980-07-18 | Formation of thin film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5723231A (enrdf_load_stackoverflow) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5986227A (ja) * | 1982-11-10 | 1984-05-18 | Toshiba Corp | ガラス被膜の形成方法 |
JPS6229144A (ja) * | 1985-07-29 | 1987-02-07 | Shinetsu Ishiei Kk | スパツタリング用タ−ゲツト |
US5227314A (en) * | 1989-03-22 | 1993-07-13 | At&T Bell Laboratories | Method of making metal conductors having a mobile inn getterer therein |
-
1980
- 1980-07-18 JP JP9889180A patent/JPS5723231A/ja active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5986227A (ja) * | 1982-11-10 | 1984-05-18 | Toshiba Corp | ガラス被膜の形成方法 |
JPS6229144A (ja) * | 1985-07-29 | 1987-02-07 | Shinetsu Ishiei Kk | スパツタリング用タ−ゲツト |
US5227314A (en) * | 1989-03-22 | 1993-07-13 | At&T Bell Laboratories | Method of making metal conductors having a mobile inn getterer therein |
Also Published As
Publication number | Publication date |
---|---|
JPS6217854B2 (enrdf_load_stackoverflow) | 1987-04-20 |
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