JPS57207387A - Semiconductor optical function element - Google Patents

Semiconductor optical function element

Info

Publication number
JPS57207387A
JPS57207387A JP56092496A JP9249681A JPS57207387A JP S57207387 A JPS57207387 A JP S57207387A JP 56092496 A JP56092496 A JP 56092496A JP 9249681 A JP9249681 A JP 9249681A JP S57207387 A JPS57207387 A JP S57207387A
Authority
JP
Japan
Prior art keywords
type
layer
section
striped
oscillator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56092496A
Other languages
English (en)
Inventor
Isao Hino
Kuniaki Iwamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56092496A priority Critical patent/JPS57207387A/ja
Publication of JPS57207387A publication Critical patent/JPS57207387A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Lasers (AREA)
JP56092496A 1981-06-16 1981-06-16 Semiconductor optical function element Pending JPS57207387A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56092496A JPS57207387A (en) 1981-06-16 1981-06-16 Semiconductor optical function element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56092496A JPS57207387A (en) 1981-06-16 1981-06-16 Semiconductor optical function element

Publications (1)

Publication Number Publication Date
JPS57207387A true JPS57207387A (en) 1982-12-20

Family

ID=14055901

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56092496A Pending JPS57207387A (en) 1981-06-16 1981-06-16 Semiconductor optical function element

Country Status (1)

Country Link
JP (1) JPS57207387A (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60207390A (ja) * 1984-03-31 1985-10-18 Agency Of Ind Science & Technol 半導体装置及びその製造方法
JPS6194388A (ja) * 1984-10-16 1986-05-13 Matsushita Electric Ind Co Ltd 半導体レーザ装置
JPS62199086A (ja) * 1986-02-26 1987-09-02 Fujitsu Ltd 半導体発光装置
US4933302A (en) * 1989-04-19 1990-06-12 International Business Machines Corporation Formation of laser mirror facets and integration of optoelectronics

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60207390A (ja) * 1984-03-31 1985-10-18 Agency Of Ind Science & Technol 半導体装置及びその製造方法
JPS6194388A (ja) * 1984-10-16 1986-05-13 Matsushita Electric Ind Co Ltd 半導体レーザ装置
JPS62199086A (ja) * 1986-02-26 1987-09-02 Fujitsu Ltd 半導体発光装置
US4933302A (en) * 1989-04-19 1990-06-12 International Business Machines Corporation Formation of laser mirror facets and integration of optoelectronics

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