JPS57198681A - Optical semiconductor - Google Patents
Optical semiconductorInfo
- Publication number
- JPS57198681A JPS57198681A JP8263081A JP8263081A JPS57198681A JP S57198681 A JPS57198681 A JP S57198681A JP 8263081 A JP8263081 A JP 8263081A JP 8263081 A JP8263081 A JP 8263081A JP S57198681 A JPS57198681 A JP S57198681A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- auxiliary
- confining
- type
- type inp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4043—Edge-emitting structures with vertically stacked active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
- H01S5/32391—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers based on In(Ga)(As)P
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8263081A JPS57198681A (en) | 1981-05-30 | 1981-05-30 | Optical semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8263081A JPS57198681A (en) | 1981-05-30 | 1981-05-30 | Optical semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57198681A true JPS57198681A (en) | 1982-12-06 |
Family
ID=13779761
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8263081A Pending JPS57198681A (en) | 1981-05-30 | 1981-05-30 | Optical semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57198681A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5034956A (en) * | 1988-11-09 | 1991-07-23 | Siemens Aktiengesellschaft | Semiconductor laser in the system GaAlInAs |
CN107308964A (zh) * | 2017-07-11 | 2017-11-03 | 柳州若思纳米材料科技有限公司 | 一种埃洛石负载磷酸铟催化剂的制备方法 |
-
1981
- 1981-05-30 JP JP8263081A patent/JPS57198681A/ja active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5034956A (en) * | 1988-11-09 | 1991-07-23 | Siemens Aktiengesellschaft | Semiconductor laser in the system GaAlInAs |
CN107308964A (zh) * | 2017-07-11 | 2017-11-03 | 柳州若思纳米材料科技有限公司 | 一种埃洛石负载磷酸铟催化剂的制备方法 |
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