JPS57197823A - Liquid phase epitaxial growing method - Google Patents

Liquid phase epitaxial growing method

Info

Publication number
JPS57197823A
JPS57197823A JP8205381A JP8205381A JPS57197823A JP S57197823 A JPS57197823 A JP S57197823A JP 8205381 A JP8205381 A JP 8205381A JP 8205381 A JP8205381 A JP 8205381A JP S57197823 A JPS57197823 A JP S57197823A
Authority
JP
Japan
Prior art keywords
solution
liquid phase
growing method
phase epitaxial
gasb substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8205381A
Other languages
English (en)
Japanese (ja)
Other versions
JPS626336B2 (enrdf_load_stackoverflow
Inventor
Yutaka Kishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8205381A priority Critical patent/JPS57197823A/ja
Publication of JPS57197823A publication Critical patent/JPS57197823A/ja
Publication of JPS626336B2 publication Critical patent/JPS626336B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02398—Antimonides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02549—Antimonides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
JP8205381A 1981-05-29 1981-05-29 Liquid phase epitaxial growing method Granted JPS57197823A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8205381A JPS57197823A (en) 1981-05-29 1981-05-29 Liquid phase epitaxial growing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8205381A JPS57197823A (en) 1981-05-29 1981-05-29 Liquid phase epitaxial growing method

Publications (2)

Publication Number Publication Date
JPS57197823A true JPS57197823A (en) 1982-12-04
JPS626336B2 JPS626336B2 (enrdf_load_stackoverflow) 1987-02-10

Family

ID=13763764

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8205381A Granted JPS57197823A (en) 1981-05-29 1981-05-29 Liquid phase epitaxial growing method

Country Status (1)

Country Link
JP (1) JPS57197823A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3041751U (ja) * 1997-03-25 1997-10-03 清一 菅生 ラジオ付き帽子

Also Published As

Publication number Publication date
JPS626336B2 (enrdf_load_stackoverflow) 1987-02-10

Similar Documents

Publication Publication Date Title
JPS57197823A (en) Liquid phase epitaxial growing method
JPS5315299A (en) Liquid-phase epitaxial growth method of electrooptical crystals
JPS5680106A (en) (110) garnet liquid phase epitaxial film
JPS6461398A (en) Liquid phase epitaxial growth for semiconductor crystal
JPS56155527A (en) Apparatus for liquid phase epitaxial growth
JPS57200288A (en) Liquid-phase growing method
JPS6476995A (en) Apparatus for growing liquid phase
JPS57124413A (en) Vapor growth method for garnet epitaxial film
JPS51120667A (en) Crystal growing method
JPS5432182A (en) Epitaxial growing method in liquid phase
JPS55117231A (en) Growing method of crystal
JPS56148821A (en) Liquid phase epitaxial growth
JPS5635411A (en) Epitaxial wafer of gallium arsenide and its manufacture
JPS524782A (en) Liquid phase epitaxial growth method
JPS6490523A (en) Epitaxial growth method for ingaasp mixed crystal
JPS6437500A (en) Production of group iii-v compound semiconductor single crystal
JPS5683933A (en) Liquid phase epitaxial growth
JPS52149080A (en) Crystal thin film of compound semiconductor
JPS52149273A (en) Production of plate-shaped crystal
JPS56114317A (en) Manufacture of semiconductor heterojunction photoelectric device
JPS5635414A (en) Method of liquid phase growth
JPS5387985A (en) Gaseous phase epitaxial growth method for compound semiconductor crystal
JPS54153785A (en) Preparing method of medium resistivity asga single crystal
JPS5443186A (en) Liquid phase epitaxial growth method
JPS5289599A (en) Liquid phase eptaxial growth