JPS6437500A - Production of group iii-v compound semiconductor single crystal - Google Patents

Production of group iii-v compound semiconductor single crystal

Info

Publication number
JPS6437500A
JPS6437500A JP19382687A JP19382687A JPS6437500A JP S6437500 A JPS6437500 A JP S6437500A JP 19382687 A JP19382687 A JP 19382687A JP 19382687 A JP19382687 A JP 19382687A JP S6437500 A JPS6437500 A JP S6437500A
Authority
JP
Japan
Prior art keywords
single crystal
crystal
group iii
semiconductor single
production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19382687A
Other languages
Japanese (ja)
Inventor
Masazumi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Proterial Ltd
Original Assignee
Hitachi Metals Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Metals Ltd filed Critical Hitachi Metals Ltd
Priority to JP19382687A priority Critical patent/JPS6437500A/en
Publication of JPS6437500A publication Critical patent/JPS6437500A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To prevent penetration of group V droplet to a growing crystal and produce the titled single crystal having low rearrangement in good yield, by dipping a specific and prism-shaped seed crystal into a raw material melt and pulling up the dipped crystal. CONSTITUTION:A prism-shaped seed crystal 3 having a long axis of <100> and four side faces parallel to the long axis of {011} is dipped into a raw mate rial melt and a single crystal 1 is pulled up by a liquid sealing pulling-up method to provide the group III-V semiconductor single crystal wherein Ga of corn part, facet 2a and As facet 2b do not coincide with four angles 4 of the seed crystal 3 and rearrangement density is 3,000-20,000/cm<2>.
JP19382687A 1987-08-04 1987-08-04 Production of group iii-v compound semiconductor single crystal Pending JPS6437500A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19382687A JPS6437500A (en) 1987-08-04 1987-08-04 Production of group iii-v compound semiconductor single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19382687A JPS6437500A (en) 1987-08-04 1987-08-04 Production of group iii-v compound semiconductor single crystal

Publications (1)

Publication Number Publication Date
JPS6437500A true JPS6437500A (en) 1989-02-08

Family

ID=16314390

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19382687A Pending JPS6437500A (en) 1987-08-04 1987-08-04 Production of group iii-v compound semiconductor single crystal

Country Status (1)

Country Link
JP (1) JPS6437500A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0610252A (en) * 1992-05-13 1994-01-18 Karl Mayer Textil Mas Fab Gmbh Warp knitting machine

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0610252A (en) * 1992-05-13 1994-01-18 Karl Mayer Textil Mas Fab Gmbh Warp knitting machine

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