JPS57196575A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS57196575A JPS57196575A JP8141081A JP8141081A JPS57196575A JP S57196575 A JPS57196575 A JP S57196575A JP 8141081 A JP8141081 A JP 8141081A JP 8141081 A JP8141081 A JP 8141081A JP S57196575 A JPS57196575 A JP S57196575A
- Authority
- JP
- Japan
- Prior art keywords
- contact part
- resist
- coated
- polycrystalline
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000003647 oxidation Effects 0.000 abstract 2
- 238000007254 oxidation reaction Methods 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To prevent the breaking of wire at the contact part of the titled device by a method wherein the stepping at the contact part is reduced. CONSTITUTION:A selective oxidation is performed on an Si substrate using a nitride silicon film, and after a gate oxide film has been formed, a polycrystalline Si is formed as an electrode, the gate electrode (Si polycrystalline) is coated by performing thermal oxidation, and a source and drain region is formed by implanting an ion using the gate electrode as a mask. Then, after SiO2 has been coated on the surface of the above region by performing CVD method, all the area excluding the contact part is covered by resist, the contact part of the source and drain region is formed using the resist as a mask, and after Al 46 for wiring has been evaporated, the Al located on the area other than the contact part is removed using a resist 47, and then a patterning wiring 46B is coated on the above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8141081A JPS57196575A (en) | 1981-05-28 | 1981-05-28 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8141081A JPS57196575A (en) | 1981-05-28 | 1981-05-28 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57196575A true JPS57196575A (en) | 1982-12-02 |
Family
ID=13745559
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8141081A Pending JPS57196575A (en) | 1981-05-28 | 1981-05-28 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57196575A (en) |
-
1981
- 1981-05-28 JP JP8141081A patent/JPS57196575A/en active Pending
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