JPS6477169A - Manufacture of mos transistor - Google Patents
Manufacture of mos transistorInfo
- Publication number
- JPS6477169A JPS6477169A JP23247687A JP23247687A JPS6477169A JP S6477169 A JPS6477169 A JP S6477169A JP 23247687 A JP23247687 A JP 23247687A JP 23247687 A JP23247687 A JP 23247687A JP S6477169 A JPS6477169 A JP S6477169A
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- accomplished
- etching
- contact window
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE:To protect junction silicon in source.drain regions from breakdown attributable to over-etching by a method wherein a PSG etching process is accomplished, a thermal oxidizing process is accomplished for the surface of a silicon substrate, and then Si3N4 is subjected to etching. CONSTITUTION:An Si3N4 film 24 is formed on a gate electrode 23 and covers the entire surface. Ion implantation is accomplished, with the gate electrode 23 and the Si3N4 film 24 thereon serving as a mask, for the formation of a n<+>-type source region 25 and n<+>-type drain region 26. PSG is deposited on the entire surface by CVD for the formation of an interlayer insulating film 27, contact holes 28 are provided for the source and drain regions 25 and 26, and a contact window 29 is provided for the gate electrode 23. Dry oxidation is accomplished whereby an oxide film 30 is formed on the contact window surfaces in the source and drain regions 25 and 26. The Si3N4 film 24 is removed by RIE from the contact window 28 on the gate electrode 23 for the exposure of the gate electrode 23. The entire surface is exposed to etching for the removal of SiO2 from a silicon substrate contact window portion 27 for the exposure of the substrate. Finally, aluminum is removed by spattering in an RIE process for the construction of an aluminum wiring 31.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62232476A JP2583243B2 (en) | 1987-09-18 | 1987-09-18 | Method for manufacturing MOS transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62232476A JP2583243B2 (en) | 1987-09-18 | 1987-09-18 | Method for manufacturing MOS transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6477169A true JPS6477169A (en) | 1989-03-23 |
JP2583243B2 JP2583243B2 (en) | 1997-02-19 |
Family
ID=16939899
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62232476A Expired - Lifetime JP2583243B2 (en) | 1987-09-18 | 1987-09-18 | Method for manufacturing MOS transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2583243B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6615050B1 (en) * | 1992-03-05 | 2003-09-02 | Qualcomm Incorporated | Apparatus and method for reducing message collision between mobile stations simultaneously accessing a base station in a CDMA cellular communication system |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5687366A (en) * | 1979-12-17 | 1981-07-15 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
-
1987
- 1987-09-18 JP JP62232476A patent/JP2583243B2/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5687366A (en) * | 1979-12-17 | 1981-07-15 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6615050B1 (en) * | 1992-03-05 | 2003-09-02 | Qualcomm Incorporated | Apparatus and method for reducing message collision between mobile stations simultaneously accessing a base station in a CDMA cellular communication system |
Also Published As
Publication number | Publication date |
---|---|
JP2583243B2 (en) | 1997-02-19 |
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