JPS57190318A - Electron beam exposure device - Google Patents

Electron beam exposure device

Info

Publication number
JPS57190318A
JPS57190318A JP56075390A JP7539081A JPS57190318A JP S57190318 A JPS57190318 A JP S57190318A JP 56075390 A JP56075390 A JP 56075390A JP 7539081 A JP7539081 A JP 7539081A JP S57190318 A JPS57190318 A JP S57190318A
Authority
JP
Japan
Prior art keywords
cassette
chamber
temperature
electron beam
beam exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56075390A
Other languages
Japanese (ja)
Inventor
Masaharu Ninomiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shibaura Machine Co Ltd
Original Assignee
Toshiba Machine Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Machine Co Ltd filed Critical Toshiba Machine Co Ltd
Priority to JP56075390A priority Critical patent/JPS57190318A/en
Publication of JPS57190318A publication Critical patent/JPS57190318A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Abstract

PURPOSE:To contrive the improvement of workability and quality, by equipping a thermosensor and heating device in a reserve chamber of electron beam exposure with a sensor and controller for heating provided in the outside of the chamber. CONSTITUTION:A cassette 1 with a wafer or mask 7 suppressed 8 by a reference surface 13 built-in is settled in the reserve chamber 3 via a retaining device 2. When the chamber 3 is evacuated by a pump 4, the adiabatic expansion of gas decreases the temperature in the chamber followed by the decrease of the temperature of the cassette 1 and retaining device 2. This is detected by the sensor 5 for control 9 with the heating device 6 built in a retainer 2 control-driven 10. Therefore, the cassette 1 can be recovered to a fixed temperature in a short time and maintained so that the work is accelerated without strain due to the temperature recovery of th cassette 1 and mask or wafer 7 during exposure to improve the quality.
JP56075390A 1981-05-19 1981-05-19 Electron beam exposure device Pending JPS57190318A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56075390A JPS57190318A (en) 1981-05-19 1981-05-19 Electron beam exposure device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56075390A JPS57190318A (en) 1981-05-19 1981-05-19 Electron beam exposure device

Publications (1)

Publication Number Publication Date
JPS57190318A true JPS57190318A (en) 1982-11-22

Family

ID=13574807

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56075390A Pending JPS57190318A (en) 1981-05-19 1981-05-19 Electron beam exposure device

Country Status (1)

Country Link
JP (1) JPS57190318A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60171725A (en) * 1984-02-17 1985-09-05 Toshiba Corp Charged beam exposure unit
JPS61239624A (en) * 1985-04-16 1986-10-24 Toshiba Mach Co Ltd Apparatus and process of loading
JP2003031470A (en) * 2001-07-16 2003-01-31 Nikon Corp Projection aligner
JP2005327901A (en) * 2004-05-14 2005-11-24 Hitachi High-Technologies Corp Electron beam lithography apparatus
JP2008064694A (en) * 2006-09-11 2008-03-21 Canon Inc Interference measuring instrument

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60171725A (en) * 1984-02-17 1985-09-05 Toshiba Corp Charged beam exposure unit
JPS61239624A (en) * 1985-04-16 1986-10-24 Toshiba Mach Co Ltd Apparatus and process of loading
JP2003031470A (en) * 2001-07-16 2003-01-31 Nikon Corp Projection aligner
JP2005327901A (en) * 2004-05-14 2005-11-24 Hitachi High-Technologies Corp Electron beam lithography apparatus
JP2008064694A (en) * 2006-09-11 2008-03-21 Canon Inc Interference measuring instrument

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