JPS57188870A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS57188870A JPS57188870A JP7354581A JP7354581A JPS57188870A JP S57188870 A JPS57188870 A JP S57188870A JP 7354581 A JP7354581 A JP 7354581A JP 7354581 A JP7354581 A JP 7354581A JP S57188870 A JPS57188870 A JP S57188870A
- Authority
- JP
- Japan
- Prior art keywords
- film
- self
- substrate
- type
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 2
- 229910052796 boron Inorganic materials 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000000149 penetrating effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To increase accuracy by self-alignment by a method wherein a hole section penetrating an insulating film and a multilayer film covering on a substrate is formed and the surface of the substrate is exposed by self-matching to the hole section and the second and the third semiconductor regions are formed from the hole section. CONSTITUTION:An N<-> type epitaxial layer 3 grown on a P type Si substrate 1 through an N<+> type buried layer 2 is isolated into each element region by a thick oxide film 6. An Si3N4 film 9, PSG film 10, poly Si film 11, resist film 12 are consecutively stacked on the each element region and a ring hole 14 is formed. A poly Si film 16 is selectively grown at the hole. Boron is bombarded under this condition for heat treatment and the boron in the film 16 is doped in the layer 3 to form a P<+> type graft base region 18 by diffusion. In this way, each region can be formed by self-alignment and accuracy is improved.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7354581A JPS57188870A (en) | 1981-05-18 | 1981-05-18 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7354581A JPS57188870A (en) | 1981-05-18 | 1981-05-18 | Semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57188870A true JPS57188870A (en) | 1982-11-19 |
Family
ID=13521307
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7354581A Pending JPS57188870A (en) | 1981-05-18 | 1981-05-18 | Semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57188870A (en) |
-
1981
- 1981-05-18 JP JP7354581A patent/JPS57188870A/en active Pending
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