JPS57187632A - Semiconductor pressure conversion device - Google Patents

Semiconductor pressure conversion device

Info

Publication number
JPS57187632A
JPS57187632A JP7146181A JP7146181A JPS57187632A JP S57187632 A JPS57187632 A JP S57187632A JP 7146181 A JP7146181 A JP 7146181A JP 7146181 A JP7146181 A JP 7146181A JP S57187632 A JPS57187632 A JP S57187632A
Authority
JP
Japan
Prior art keywords
metal
pipe
pressure
glass
introduction hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7146181A
Other languages
Japanese (ja)
Inventor
Susumu Kimijima
Shozo Sato
Shunji Shiromizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP7146181A priority Critical patent/JPS57187632A/en
Publication of JPS57187632A publication Critical patent/JPS57187632A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/0061—Electrical connection means
    • G01L19/0084—Electrical connection means to the outside of the housing

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

PURPOSE:To make manufacture of a pressure conversion easy and certain by cutting with a metal pincher a metal pipe connected to the pressure introduction hole in order to make unnecessary the work in a vacuum vessel and join of metal and glass. CONSTITUTION:A semiconductor pressure sensitive element made of a plate of a single silicon crystal on which dispersion resistance layer 3 is formed is provided on a thin diaphragm 2 that communicates with a pressure introduction hole 12, and the metal pipe 51 and the cap section 52 of a pressure introduction hole that forms a vacuum chamber are fixed together by soldering, etc. Then, the pipe 51 is connected to a vacuum pump and the pipe 51 is cut off with a metal pincher 54. In this way a pressure conversion device for absolute pressure can be made easily and certainly that is provide with a vacuum chamber on the minus side without adhesion and fixing of the pipe 51 to the cap section in a vacuum vessel or without forming the pipe 51 with glass and joining and so on of glass and metal.
JP7146181A 1981-05-14 1981-05-14 Semiconductor pressure conversion device Pending JPS57187632A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7146181A JPS57187632A (en) 1981-05-14 1981-05-14 Semiconductor pressure conversion device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7146181A JPS57187632A (en) 1981-05-14 1981-05-14 Semiconductor pressure conversion device

Publications (1)

Publication Number Publication Date
JPS57187632A true JPS57187632A (en) 1982-11-18

Family

ID=13461241

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7146181A Pending JPS57187632A (en) 1981-05-14 1981-05-14 Semiconductor pressure conversion device

Country Status (1)

Country Link
JP (1) JPS57187632A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62259029A (en) * 1986-05-02 1987-11-11 Omron Tateisi Electronics Co Manufacture of semiconductor pressure sensor
US20120067131A1 (en) * 2009-05-11 2012-03-22 Thomas Moelkner High pressure sensor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5383485A (en) * 1976-12-28 1978-07-22 Fuji Electric Co Ltd Diffusion type semiconductor pressure transducer
JPS54141587A (en) * 1978-04-26 1979-11-02 Toshiba Corp Production of semiconductor absolute pressure transducer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5383485A (en) * 1976-12-28 1978-07-22 Fuji Electric Co Ltd Diffusion type semiconductor pressure transducer
JPS54141587A (en) * 1978-04-26 1979-11-02 Toshiba Corp Production of semiconductor absolute pressure transducer

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62259029A (en) * 1986-05-02 1987-11-11 Omron Tateisi Electronics Co Manufacture of semiconductor pressure sensor
JPH0684915B2 (en) * 1986-05-02 1994-10-26 オムロン株式会社 Method for manufacturing semiconductor pressure sensor
US20120067131A1 (en) * 2009-05-11 2012-03-22 Thomas Moelkner High pressure sensor

Similar Documents

Publication Publication Date Title
EP0381775A4 (en) Pressure sensor, its production method and hydraulic apparatus equipped with the pressure sensor
EP0351701A3 (en) Pressure transducer and its manufacturing process
WO1979000783A1 (en) Semiconductor pressure sensors having a plurality of pressure-sensitive diaphragms and method of manufacturing the same
JPS5754923A (en) Display device
JPS57187632A (en) Semiconductor pressure conversion device
JPS5577178A (en) Semiconductor pressure converting element
JPS5550668A (en) Semiconductor pressure converter
JPS57136132A (en) Semiconductor pressure transducer
JPS57181527A (en) Liquid crystal display device
JPS57154878A (en) Semiconductor sensor
JPS54144187A (en) Semiconductor pressure converter
JPS56148870A (en) Semiconductor presssure converter
JPS568863A (en) Substrate for semiconductor device
JPS52149992A (en) Pressure transducer
JPS5522819A (en) Semiconductor strain gauge absolute pressure sensor
Funahisa et al. Pressure Welding of Ceramics and Aluminum Single Crystals in Extremely High Vacuum
JPS55151898A (en) Electroacoustic converter and its manufacture
JPS57113231A (en) Semiconductor device
SU1835913A1 (en) Integral semiconductor pressure transducer and process of its manufacture
JPS52115181A (en) Sealing method for semiconductor devices
JPS56164581A (en) Semiconductor pressure converter
JPS6488521A (en) Liquid crystal display unit
JPS57204176A (en) Semiconductor pressure converter
JPS56152273A (en) Semiconductor pressure transducer
JPS57178347A (en) Semiconductor device