WO1979000783A1 - Semiconductor pressure sensors having a plurality of pressure-sensitive diaphragms and method of manufacturing the same - Google Patents

Semiconductor pressure sensors having a plurality of pressure-sensitive diaphragms and method of manufacturing the same Download PDF

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Publication number
WO1979000783A1
WO1979000783A1 PCT/JP1979/000062 JP7900062W WO7900783A1 WO 1979000783 A1 WO1979000783 A1 WO 1979000783A1 JP 7900062 W JP7900062 W JP 7900062W WO 7900783 A1 WO7900783 A1 WO 7900783A1
Authority
WO
WIPO (PCT)
Prior art keywords
pressure
semiconductor chip
monocrystalline semiconductor
sensitive
sensitive diaphragms
Prior art date
Application number
PCT/JP1979/000062
Other languages
French (fr)
Japanese (ja)
Inventor
S Suzuki
S Kobori
K Kawakami
M Takahashi
M Nishihara
H Hachino
H Sato
Original Assignee
Hitachi Ltd
S Suzuki
S Kobori
K Kawakami
M Takahashi
M Nishihara
H Hachino
H Sato
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, S Suzuki, S Kobori, K Kawakami, M Takahashi, M Nishihara, H Hachino, H Sato filed Critical Hitachi Ltd
Priority to DE19792943231 priority Critical patent/DE2943231A1/en
Publication of WO1979000783A1 publication Critical patent/WO1979000783A1/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/14—Housings
    • G01L19/147—Details about the mounting of the sensor to support or covering means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/0007—Fluidic connecting means
    • G01L19/0038—Fluidic connecting means being part of the housing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/0061—Electrical connection means
    • G01L19/0084—Electrical connection means to the outside of the housing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/14—Housings
    • G01L19/148—Details about the circuit board integration, e.g. integrated with the diaphragm surface or encapsulation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
    • G01L9/06—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices
    • G01L9/065—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices with temperature compensating means

Abstract

A semiconductor pressure sensor having a plurality of pressure-sensitive diaphragms so as to deliver outputs of at least two kinds of pressures as electric signals. This semiconductor pressure sensor comprises a monocrystalline semiconductor chip (1) formed thereon with at least two pressure-sensitive diaphragms (12a, 12b), a pair of strain gauges (13a and 14a, or 13b and 14b) formed on each pressure-sensitive diaphragms of the monocrystalline semiconductor chip, electrodes (15a and 16a, or 15b and 16b) provided on the monocrystalline semiconductor chip to electrically connect the strain gauges with each other, and a substrate (2) of borosilicate glass having the coefficient of thermal expansion, which is substantially equal to that of the monocrystalline semiconductor chip, said monocrystalline semiconductor chip (1) and said glass substrate (2) being bonded together by means of an anodic bonding process. According to this invention, there may be provided the pressure-sensitive sensor has a reduced output error.
PCT/JP1979/000062 1978-03-17 1979-03-12 Semiconductor pressure sensors having a plurality of pressure-sensitive diaphragms and method of manufacturing the same WO1979000783A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19792943231 DE2943231A1 (en) 1978-03-17 1979-03-12 SEMICONDUCTOR PRESSURE SENSORS HAVING A PLURALITY OF PRESSURE-SENSITIVE DIAPHRAGMS AND METHOD OF MANUFACTURING THE SAME

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP78/29936 1978-03-17
JP2993678A JPS54123077A (en) 1978-03-17 1978-03-17 Pressure sensor

Publications (1)

Publication Number Publication Date
WO1979000783A1 true WO1979000783A1 (en) 1979-10-18

Family

ID=12289864

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP1979/000062 WO1979000783A1 (en) 1978-03-17 1979-03-12 Semiconductor pressure sensors having a plurality of pressure-sensitive diaphragms and method of manufacturing the same

Country Status (6)

Country Link
JP (1) JPS54123077A (en)
AU (1) AU4500279A (en)
FR (1) FR2420210A1 (en)
GB (1) GB2036425B (en)
IT (1) IT1111588B (en)
WO (1) WO1979000783A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU658524B1 (en) * 1993-08-17 1995-04-13 Yokogawa Electric Corporation Semiconductor type differential pressure measurement apparatus and method for manufacturing the same
DE19648048A1 (en) * 1995-11-21 1997-06-19 Fuji Electric Co Ltd Capacitive pressure detector for industrial applications

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4407296A (en) * 1980-09-12 1983-10-04 Medtronic, Inc. Integral hermetic impantable pressure transducer
EP0049955A1 (en) * 1980-10-09 1982-04-21 General Motors Corporation Dual cavity pressure sensor
JPS57104835A (en) * 1980-12-23 1982-06-30 Toyota Motor Corp Detecting method for pressure in internal combustion engine
US4432372A (en) * 1981-08-28 1984-02-21 Medtronic, Inc. Two-lead power/signal multiplexed transducer
JPS5915944U (en) * 1982-07-21 1984-01-31 株式会社日立製作所 differential pressure detector
US4730496A (en) * 1986-06-23 1988-03-15 Rosemount Inc. Capacitance pressure sensor
US4773269A (en) * 1986-07-28 1988-09-27 Rosemount Inc. Media isolated differential pressure sensors
DE3772514D1 (en) * 1986-10-28 1991-10-02 Sumitomo Electric Industries MEASURING METHOD FOR A SEMICONDUCTOR PRESSURE SENSOR.
DE3784063T2 (en) * 1987-05-27 1993-07-15 Smc Corp PRESSURE MEASURING DEVICE.
JPS6461637A (en) * 1987-09-02 1989-03-08 Matsushita Electric Ind Co Ltd Semiconductor pressure sensor
JPS6461634A (en) * 1987-09-02 1989-03-08 Matsushita Electric Ind Co Ltd Semiconductor pressure sensor
JPH0814518B2 (en) * 1987-12-28 1996-02-14 松下電器産業株式会社 Method for manufacturing semiconductor pressure sensor
JPH03200034A (en) * 1989-12-28 1991-09-02 Matsushita Electric Ind Co Ltd Semiconductor pressure sensor
JPH03200035A (en) * 1989-12-28 1991-09-02 Matsushita Electric Ind Co Ltd Semiconductor pressure sensor
JP2771070B2 (en) * 1992-03-25 1998-07-02 日立建機株式会社 Differential pressure sensor
US7077008B2 (en) 2004-07-02 2006-07-18 Honeywell International Inc. Differential pressure measurement using backside sensing and a single ASIC
CN101088000B (en) * 2004-08-23 2010-11-10 霍尼韦尔国际公司 Absolute pressure detection system and method
US7401522B2 (en) * 2005-05-26 2008-07-22 Rosemount Inc. Pressure sensor using compressible sensor body

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49751B1 (en) * 1967-05-03 1974-01-09
JPS5135294A (en) * 1974-09-20 1976-03-25 Hitachi Ltd HANDOTAIATSURYOKUHENKANKI
JPS5190587A (en) * 1975-02-07 1976-08-09
JPS5255392A (en) * 1975-10-31 1977-05-06 Hitachi Ltd Semiconductor pressure sensor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49751B1 (en) * 1967-05-03 1974-01-09
JPS5135294A (en) * 1974-09-20 1976-03-25 Hitachi Ltd HANDOTAIATSURYOKUHENKANKI
JPS5190587A (en) * 1975-02-07 1976-08-09
JPS5255392A (en) * 1975-10-31 1977-05-06 Hitachi Ltd Semiconductor pressure sensor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU658524B1 (en) * 1993-08-17 1995-04-13 Yokogawa Electric Corporation Semiconductor type differential pressure measurement apparatus and method for manufacturing the same
DE19648048A1 (en) * 1995-11-21 1997-06-19 Fuji Electric Co Ltd Capacitive pressure detector for industrial applications
DE19648048C2 (en) * 1995-11-21 2001-11-29 Fuji Electric Co Ltd Detector device for pressure measurement based on measured capacitance values

Also Published As

Publication number Publication date
IT1111588B (en) 1986-01-13
GB2036425A (en) 1980-06-25
FR2420210B1 (en) 1984-07-06
GB2036425B (en) 1983-02-09
AU4500279A (en) 1979-09-20
FR2420210A1 (en) 1979-10-12
IT7921081A0 (en) 1979-03-16
JPS54123077A (en) 1979-09-25

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