JPS6461634A - Semiconductor pressure sensor - Google Patents

Semiconductor pressure sensor

Info

Publication number
JPS6461634A
JPS6461634A JP62219519A JP21951987A JPS6461634A JP S6461634 A JPS6461634 A JP S6461634A JP 62219519 A JP62219519 A JP 62219519A JP 21951987 A JP21951987 A JP 21951987A JP S6461634 A JPS6461634 A JP S6461634A
Authority
JP
Japan
Prior art keywords
pressure
chip
measured
pressure application
application part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62219519A
Other languages
Japanese (ja)
Inventor
Shogo Asano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62219519A priority Critical patent/JPS6461634A/en
Publication of JPS6461634A publication Critical patent/JPS6461634A/en
Pending legal-status Critical Current

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  • Measuring Fluid Pressure (AREA)

Abstract

PURPOSE:To measure two absolute value of different pressure at the same time by providing a vacuum chamber on the opposite side from two pressure application part across two pressure sensing diaphragms provided to a semiconductor chip. CONSTITUTION:The two diaphragms 6a and 6b are formed on the semiconductor single crystal chip 4 and through holes 16a and 16b are formed in a pedestal 3 at the lower part. A stem 1 is formed of a glass material which has a coefficient of heat expansion close to that of the chip 4 and through holes 17a and 17b are bored. Then when the chip 4 is joined with the stem 1 by sealing, the vacuum chamber 13 is formed on the opposite side from the two pressure application parts. The atmospheric pressure is measured by one pressure application part and the pressure of, for example, an air suction manifold is measured by the other pressure application part. Thus, two absolute values of different pressure can be measured at the same time.
JP62219519A 1987-09-02 1987-09-02 Semiconductor pressure sensor Pending JPS6461634A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62219519A JPS6461634A (en) 1987-09-02 1987-09-02 Semiconductor pressure sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62219519A JPS6461634A (en) 1987-09-02 1987-09-02 Semiconductor pressure sensor

Publications (1)

Publication Number Publication Date
JPS6461634A true JPS6461634A (en) 1989-03-08

Family

ID=16736741

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62219519A Pending JPS6461634A (en) 1987-09-02 1987-09-02 Semiconductor pressure sensor

Country Status (1)

Country Link
JP (1) JPS6461634A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54123077A (en) * 1978-03-17 1979-09-25 Hitachi Ltd Pressure sensor
JPS5850443A (en) * 1981-09-21 1983-03-24 Mitsubishi Electric Corp Pressure-electricity transducer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54123077A (en) * 1978-03-17 1979-09-25 Hitachi Ltd Pressure sensor
JPS5850443A (en) * 1981-09-21 1983-03-24 Mitsubishi Electric Corp Pressure-electricity transducer

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