JPS6461640A - Semiconductor pressure sensor - Google Patents

Semiconductor pressure sensor

Info

Publication number
JPS6461640A
JPS6461640A JP21952687A JP21952687A JPS6461640A JP S6461640 A JPS6461640 A JP S6461640A JP 21952687 A JP21952687 A JP 21952687A JP 21952687 A JP21952687 A JP 21952687A JP S6461640 A JPS6461640 A JP S6461640A
Authority
JP
Japan
Prior art keywords
stem
pedestal
diaphragm
heat stress
consequently
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21952687A
Other languages
Japanese (ja)
Inventor
Kazuhiko Mizojiri
Shogo Asano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP21952687A priority Critical patent/JPS6461640A/en
Publication of JPS6461640A publication Critical patent/JPS6461640A/en
Pending legal-status Critical Current

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  • Measuring Fluid Pressure (AREA)

Abstract

PURPOSE:To reduce the influence of heat stress from a stem side and to improve pressure detection characteristics by arranging a semiconductor chip on a stem across a pedestal almost at right angles and a diaphragm at a distance from the stem. CONSTITUTION:The pedestal 3 and stem 1 are formed of materials which have nearly the coefficients of heat expansion similar to the semiconductor single crystal chip 4 where the pressure sensing diaphragm 6 is formed. Then the semiconductor single crystal chip 4 is arranged on the flank of the pedestal 3 almost at right angles to the stem 1 and at a distance from the stem 1. Consequently, the contact area between the pedestal 3 and stem 1 is reducible and the influence of heat stress from the stem side can be reduced. Consequently, the variation difference of the heat stress of a resistance system formed on the diaphragm is eliminated to stabilize the pressure detection characteristics.
JP21952687A 1987-09-02 1987-09-02 Semiconductor pressure sensor Pending JPS6461640A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21952687A JPS6461640A (en) 1987-09-02 1987-09-02 Semiconductor pressure sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21952687A JPS6461640A (en) 1987-09-02 1987-09-02 Semiconductor pressure sensor

Publications (1)

Publication Number Publication Date
JPS6461640A true JPS6461640A (en) 1989-03-08

Family

ID=16736861

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21952687A Pending JPS6461640A (en) 1987-09-02 1987-09-02 Semiconductor pressure sensor

Country Status (1)

Country Link
JP (1) JPS6461640A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5181417A (en) * 1989-07-10 1993-01-26 Nippon Soken, Inc. Pressure detecting device
JP2003083829A (en) * 2001-09-12 2003-03-19 Toyo Commun Equip Co Ltd Pressure sensor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5817421A (en) * 1981-07-24 1983-02-01 Sanyo Electric Co Ltd Liquid crystal display element

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5817421A (en) * 1981-07-24 1983-02-01 Sanyo Electric Co Ltd Liquid crystal display element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5181417A (en) * 1989-07-10 1993-01-26 Nippon Soken, Inc. Pressure detecting device
JP2003083829A (en) * 2001-09-12 2003-03-19 Toyo Commun Equip Co Ltd Pressure sensor

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