JPS57186337A - Forming method for fine pattern - Google Patents

Forming method for fine pattern

Info

Publication number
JPS57186337A
JPS57186337A JP7183281A JP7183281A JPS57186337A JP S57186337 A JPS57186337 A JP S57186337A JP 7183281 A JP7183281 A JP 7183281A JP 7183281 A JP7183281 A JP 7183281A JP S57186337 A JPS57186337 A JP S57186337A
Authority
JP
Japan
Prior art keywords
film
oxidized
etching
gas
metallic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7183281A
Other languages
Japanese (ja)
Inventor
Kazuhiro Tanaka
Yoshimare Suzuki
Teruhiko Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7183281A priority Critical patent/JPS57186337A/en
Publication of JPS57186337A publication Critical patent/JPS57186337A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To obtain a fine pattern by inversely etching a metallic Cr film and an oxidized Cr film containing an impurity such as W or the like with an ion beam in a plasma containing carbon tetrachloride gas or the like when covering the metallic Cr film and the oxidized Cr film on a glass substrate and etching the films with a mask of a resist film. CONSTITUTION:A metallic Cr film 11 and an oxidized Cr film 12 containing an impurity such as W or the like are laminated on a glass substrate 10, an electron beam resist film 13 is coated on the films, and is baked at 170 deg.C for 20min. Subsequently, an electron beam 16 is selectively emitted to the film 13 as the prescribed pattern, with the remaining film 13 as a mask the film is etched with any of ultraviolet ray, far ultraviolet ray, electron beam, X-ray and ion beam in a plasma containing the mixture gas of carbon tetrachloride gas, nitrogen gas, and oxygen gas. In this manner, the part covered with the film 13 is proceeded in etching, but the exposed part is formed with the prescribed inverting layer 15 retaining with the film 12.
JP7183281A 1981-05-11 1981-05-11 Forming method for fine pattern Pending JPS57186337A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7183281A JPS57186337A (en) 1981-05-11 1981-05-11 Forming method for fine pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7183281A JPS57186337A (en) 1981-05-11 1981-05-11 Forming method for fine pattern

Publications (1)

Publication Number Publication Date
JPS57186337A true JPS57186337A (en) 1982-11-16

Family

ID=13471907

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7183281A Pending JPS57186337A (en) 1981-05-11 1981-05-11 Forming method for fine pattern

Country Status (1)

Country Link
JP (1) JPS57186337A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59141227A (en) * 1983-02-01 1984-08-13 Mitsubishi Electric Corp Formation of fine pattern

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5461478A (en) * 1977-10-25 1979-05-17 Mitsubishi Electric Corp Chromium plate

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5461478A (en) * 1977-10-25 1979-05-17 Mitsubishi Electric Corp Chromium plate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59141227A (en) * 1983-02-01 1984-08-13 Mitsubishi Electric Corp Formation of fine pattern

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