JPS5718368A - Floating gate semiconductor memory - Google Patents
Floating gate semiconductor memoryInfo
- Publication number
- JPS5718368A JPS5718368A JP9302180A JP9302180A JPS5718368A JP S5718368 A JPS5718368 A JP S5718368A JP 9302180 A JP9302180 A JP 9302180A JP 9302180 A JP9302180 A JP 9302180A JP S5718368 A JPS5718368 A JP S5718368A
- Authority
- JP
- Japan
- Prior art keywords
- floating gate
- region
- substrate
- semiconductor memory
- gate semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 abstract 4
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9302180A JPS5718368A (en) | 1980-07-08 | 1980-07-08 | Floating gate semiconductor memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9302180A JPS5718368A (en) | 1980-07-08 | 1980-07-08 | Floating gate semiconductor memory |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5718368A true JPS5718368A (en) | 1982-01-30 |
Family
ID=14070824
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9302180A Pending JPS5718368A (en) | 1980-07-08 | 1980-07-08 | Floating gate semiconductor memory |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5718368A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100356467B1 (ko) * | 1999-12-29 | 2002-10-18 | 주식회사 하이닉스반도체 | 플래쉬 메모리 셀 |
-
1980
- 1980-07-08 JP JP9302180A patent/JPS5718368A/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100356467B1 (ko) * | 1999-12-29 | 2002-10-18 | 주식회사 하이닉스반도체 | 플래쉬 메모리 셀 |
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