JPS5718323A - X ray exposure - Google Patents
X ray exposureInfo
- Publication number
- JPS5718323A JPS5718323A JP9298380A JP9298380A JPS5718323A JP S5718323 A JPS5718323 A JP S5718323A JP 9298380 A JP9298380 A JP 9298380A JP 9298380 A JP9298380 A JP 9298380A JP S5718323 A JPS5718323 A JP S5718323A
- Authority
- JP
- Japan
- Prior art keywords
- film
- etching
- thickness
- portion except
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2037—Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
- G03F7/2039—X-ray radiation
Landscapes
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To avoid the dependence of a resist on the atmosphere of exposure as much as possible by removing a thin metal film portion except for a required absorbent pattern formed on an X ray mask substrate material. CONSTITUTION:An Au film with a thickness of about 200Angstrom for plating ground in the portion except for a required pattern portion undergoes a chemical etching and brought into contact with an etching liquid for a short time to eliminate damage to an Au absorbent pattern. A Cr film with a thickness of about 50Angstrom is necessary for increasing adhesivity between polyimide and the Au film. But it must be removed by a dry etching with a parallel flat plate type reactive sputtering device, when a gas mixture of CCl4 and air is used for the etching gas. The use of the mask thus formed reduces changes in the rate of residual film to a sufficient allowable range for the subsequent process as a negative resist.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9298380A JPS5718323A (en) | 1980-07-08 | 1980-07-08 | X ray exposure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9298380A JPS5718323A (en) | 1980-07-08 | 1980-07-08 | X ray exposure |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5718323A true JPS5718323A (en) | 1982-01-30 |
Family
ID=14069608
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9298380A Pending JPS5718323A (en) | 1980-07-08 | 1980-07-08 | X ray exposure |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5718323A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5142469A (en) * | 1974-10-08 | 1976-04-10 | Sumitomo Electric Industries | |
JPS5337703A (en) * | 1976-09-20 | 1978-04-07 | Kobe Steel Ltd | Conversion of coal |
-
1980
- 1980-07-08 JP JP9298380A patent/JPS5718323A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5142469A (en) * | 1974-10-08 | 1976-04-10 | Sumitomo Electric Industries | |
JPS5337703A (en) * | 1976-09-20 | 1978-04-07 | Kobe Steel Ltd | Conversion of coal |
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