JPS5718323A - X ray exposure - Google Patents

X ray exposure

Info

Publication number
JPS5718323A
JPS5718323A JP9298380A JP9298380A JPS5718323A JP S5718323 A JPS5718323 A JP S5718323A JP 9298380 A JP9298380 A JP 9298380A JP 9298380 A JP9298380 A JP 9298380A JP S5718323 A JPS5718323 A JP S5718323A
Authority
JP
Japan
Prior art keywords
film
etching
thickness
portion except
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9298380A
Other languages
Japanese (ja)
Inventor
Koichi Okada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9298380A priority Critical patent/JPS5718323A/en
Publication of JPS5718323A publication Critical patent/JPS5718323A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2037Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
    • G03F7/2039X-ray radiation

Landscapes

  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To avoid the dependence of a resist on the atmosphere of exposure as much as possible by removing a thin metal film portion except for a required absorbent pattern formed on an X ray mask substrate material. CONSTITUTION:An Au film with a thickness of about 200Angstrom for plating ground in the portion except for a required pattern portion undergoes a chemical etching and brought into contact with an etching liquid for a short time to eliminate damage to an Au absorbent pattern. A Cr film with a thickness of about 50Angstrom is necessary for increasing adhesivity between polyimide and the Au film. But it must be removed by a dry etching with a parallel flat plate type reactive sputtering device, when a gas mixture of CCl4 and air is used for the etching gas. The use of the mask thus formed reduces changes in the rate of residual film to a sufficient allowable range for the subsequent process as a negative resist.
JP9298380A 1980-07-08 1980-07-08 X ray exposure Pending JPS5718323A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9298380A JPS5718323A (en) 1980-07-08 1980-07-08 X ray exposure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9298380A JPS5718323A (en) 1980-07-08 1980-07-08 X ray exposure

Publications (1)

Publication Number Publication Date
JPS5718323A true JPS5718323A (en) 1982-01-30

Family

ID=14069608

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9298380A Pending JPS5718323A (en) 1980-07-08 1980-07-08 X ray exposure

Country Status (1)

Country Link
JP (1) JPS5718323A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5142469A (en) * 1974-10-08 1976-04-10 Sumitomo Electric Industries
JPS5337703A (en) * 1976-09-20 1978-04-07 Kobe Steel Ltd Conversion of coal

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5142469A (en) * 1974-10-08 1976-04-10 Sumitomo Electric Industries
JPS5337703A (en) * 1976-09-20 1978-04-07 Kobe Steel Ltd Conversion of coal

Similar Documents

Publication Publication Date Title
JPS5718323A (en) X ray exposure
ES356908A1 (en) Photolithographic masks and methods for their manufacture
JPS5569142A (en) Preventing method for peeling of resist
JPS55140231A (en) Manufacture of semiconductor element
JPS5443681A (en) Electron beam light-exposing method
JPS57166033A (en) Applying device for resist with adjusting mechanism for quantity of exhaust gas
JPS5461478A (en) Chromium plate
JPS5368981A (en) Vacuum contact printing apparatus
JPS5742043A (en) Photosensitive material
JPS5567211A (en) Production of elastic surface wave device
JPS5718324A (en) Method of working
JPS5368578A (en) Photo mask
JPS5731140A (en) Etching method by reactive ion
JPS6441218A (en) Surface treatment
JPS57112025A (en) Formation of pattern
JPS57201027A (en) Dry etching method
JPS54162460A (en) Electrode forming method
JPS55150230A (en) Method of forming metallic pattern for semiconductor device
JPS57186335A (en) Forming method for pattern
JPS54149583A (en) Pattering method for wafer
JPS5743425A (en) Forming method for fine pattern
JPS56130750A (en) Manufacture of mask
JPS56101745A (en) Formation of microminiature electrode
JPS6489435A (en) Dissolution removing method of resist
JPS54105999A (en) Electrochromic display unit