JPS57181131A - Pressure-contact type semiconductor device - Google Patents

Pressure-contact type semiconductor device

Info

Publication number
JPS57181131A
JPS57181131A JP6595681A JP6595681A JPS57181131A JP S57181131 A JPS57181131 A JP S57181131A JP 6595681 A JP6595681 A JP 6595681A JP 6595681 A JP6595681 A JP 6595681A JP S57181131 A JPS57181131 A JP S57181131A
Authority
JP
Japan
Prior art keywords
electrodes
cathode
region
common
block
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6595681A
Other languages
English (en)
Inventor
Minoru Azuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP6595681A priority Critical patent/JPS57181131A/ja
Priority to DE8282103413T priority patent/DE3278002D1/de
Priority to EP19820103413 priority patent/EP0064231B1/en
Publication of JPS57181131A publication Critical patent/JPS57181131A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
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    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41708—Emitter or collector electrodes for bipolar transistors
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    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
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    • H01L2224/73265—Layer and wire connectors
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    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10157—Shape being other than a cuboid at the active surface
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
  • Die Bonding (AREA)
JP6595681A 1981-04-30 1981-04-30 Pressure-contact type semiconductor device Pending JPS57181131A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP6595681A JPS57181131A (en) 1981-04-30 1981-04-30 Pressure-contact type semiconductor device
DE8282103413T DE3278002D1 (en) 1981-04-30 1982-04-22 Compression-type semiconductor device
EP19820103413 EP0064231B1 (en) 1981-04-30 1982-04-22 Compression-type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6595681A JPS57181131A (en) 1981-04-30 1981-04-30 Pressure-contact type semiconductor device

Publications (1)

Publication Number Publication Date
JPS57181131A true JPS57181131A (en) 1982-11-08

Family

ID=13301938

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6595681A Pending JPS57181131A (en) 1981-04-30 1981-04-30 Pressure-contact type semiconductor device

Country Status (3)

Country Link
EP (1) EP0064231B1 (ja)
JP (1) JPS57181131A (ja)
DE (1) DE3278002D1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0457370A (ja) * 1990-06-27 1992-02-25 Toyo Electric Mfg Co Ltd 圧接形パツケージ構造に適合した静電誘導形半導体素子

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59134876A (ja) * 1983-01-20 1984-08-02 Mitsubishi Electric Corp 半導体装置
DE3335836A1 (de) * 1983-10-01 1985-04-18 Brown, Boveri & Cie Ag, 6800 Mannheim Kontaktelektrode fuer leistungshalbleiterbauelement
DE3667362D1 (de) * 1985-10-15 1990-01-11 Siemens Ag Leistungsthyristor.
DE3616185A1 (de) * 1986-05-14 1987-11-19 Semikron Elektronik Gmbh Halbleiterbauelement
DE3616233A1 (de) * 1986-05-14 1987-11-19 Semikron Elektronik Gmbh Halbleiterbauelement
JP2594278B2 (ja) * 1986-07-30 1997-03-26 ビービーシー ブラウン ボヴェリ アクチェンゲゼルシャフト 加圧接続型ｇｔｏサイリスタ
CH670334A5 (ja) * 1986-09-16 1989-05-31 Bbc Brown Boveri & Cie
EP0262485A1 (de) * 1986-10-01 1988-04-06 BBC Brown Boveri AG Halbleiterbauelement mit einer Ätzgrube
DE3635708A1 (de) * 1986-10-21 1988-04-28 Bbc Brown Boveri & Cie Verfahren und anordnung zur kontaktierung einer elektrode mit mehreren emitter-/kathoden-bereichen eines halbleiterbauelementes
JPH081914B2 (ja) * 1987-03-31 1996-01-10 株式会社東芝 圧接型半導体装置
DE3869382D1 (de) * 1988-01-27 1992-04-23 Asea Brown Boveri Abschaltbares leistungshalbleiterbauelement.
EP0499707B1 (de) * 1991-02-22 1996-04-03 Asea Brown Boveri Ag Abschaltbares Hochleistungs-Halbleiterbauelement
US5473193A (en) * 1994-01-06 1995-12-05 Harris Corporation Package for parallel subelement semiconductor devices

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2103146A1 (de) * 1970-01-26 1971-08-05 Westinghouse Electric Corp Mittels einer Gate Elektrode Steuer bares Schaltelement
DE2757821C3 (de) * 1976-12-28 1982-08-19 Tokyo Shibaura Electric Co., Ltd., Kawasaki, Kanagawa Verfahren zur Herstellung einer Mesa-Halbleiteranordnung mit Druckkontakt
US4161740A (en) * 1977-11-07 1979-07-17 Microwave Semiconductor Corp. High frequency power transistor having reduced interconnection inductance and thermal resistance
JPS55121654A (en) * 1979-03-13 1980-09-18 Toshiba Corp Compression bonded semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0457370A (ja) * 1990-06-27 1992-02-25 Toyo Electric Mfg Co Ltd 圧接形パツケージ構造に適合した静電誘導形半導体素子

Also Published As

Publication number Publication date
DE3278002D1 (en) 1988-02-18
EP0064231A3 (en) 1984-12-19
EP0064231A2 (en) 1982-11-10
EP0064231B1 (en) 1988-01-13

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