JPS57179093A - Method and apparatus for manufacturing single crystal of compound semiconductor - Google Patents
Method and apparatus for manufacturing single crystal of compound semiconductorInfo
- Publication number
- JPS57179093A JPS57179093A JP6387681A JP6387681A JPS57179093A JP S57179093 A JPS57179093 A JP S57179093A JP 6387681 A JP6387681 A JP 6387681A JP 6387681 A JP6387681 A JP 6387681A JP S57179093 A JPS57179093 A JP S57179093A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- temp
- melt
- vapor
- furnace
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title abstract 8
- 150000001875 compounds Chemical class 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000155 melt Substances 0.000 abstract 4
- 239000003708 ampul Substances 0.000 abstract 2
- 238000002844 melting Methods 0.000 abstract 2
- 230000008018 melting Effects 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 238000010583 slow cooling Methods 0.000 abstract 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6387681A JPS57179093A (en) | 1981-04-27 | 1981-04-27 | Method and apparatus for manufacturing single crystal of compound semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6387681A JPS57179093A (en) | 1981-04-27 | 1981-04-27 | Method and apparatus for manufacturing single crystal of compound semiconductor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57179093A true JPS57179093A (en) | 1982-11-04 |
JPH0139997B2 JPH0139997B2 (enrdf_load_stackoverflow) | 1989-08-24 |
Family
ID=13241929
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6387681A Granted JPS57179093A (en) | 1981-04-27 | 1981-04-27 | Method and apparatus for manufacturing single crystal of compound semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57179093A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61201690A (ja) * | 1985-03-04 | 1986-09-06 | Nippon Telegr & Teleph Corp <Ntt> | 化合物半導体単結晶の育成方法および育成装置 |
-
1981
- 1981-04-27 JP JP6387681A patent/JPS57179093A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61201690A (ja) * | 1985-03-04 | 1986-09-06 | Nippon Telegr & Teleph Corp <Ntt> | 化合物半導体単結晶の育成方法および育成装置 |
Also Published As
Publication number | Publication date |
---|---|
JPH0139997B2 (enrdf_load_stackoverflow) | 1989-08-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0390672A3 (en) | Method for heat process of silicon | |
GB1517445A (en) | Panel of anisotropic glass ceramic and method for its manufacture | |
JPS57179093A (en) | Method and apparatus for manufacturing single crystal of compound semiconductor | |
US4052252A (en) | Liquid phase epitaxial growth with interfacial temperature difference | |
US3261722A (en) | Process for preparing semiconductor ingots within a depression | |
US3649210A (en) | Apparatus for crucible-free zone-melting of crystalline materials | |
US3245761A (en) | Apparatus for making magnesium oxide crystals | |
CA1079613A (en) | Process for synthesizing and growing single crystalline beryl out of a molten salt | |
US4865682A (en) | Growth method of an organic compound single crystal and a boat used therefor | |
US5935327A (en) | Apparatus for growing silicon crystals | |
JP2933517B2 (ja) | 単結晶成長装置 | |
JPS55158196A (en) | Manufacture of single crystal | |
ATE242917T1 (de) | Verfahren zum herstellen eines supraleiter vom typ selten erde-barium-kupraten | |
JPS56163226A (en) | Refining method of aluminum | |
JPS6117498A (ja) | 3−5族化合物半導体の合成方法 | |
JPH1095688A (ja) | 単結晶体の製造方法 | |
RU1431391C (ru) | Способ выращивания монокристаллов теллурида кадмия | |
JPS57209897A (en) | Method and apparatus for preparation of single crystal of compound semiconductor | |
RU1175186C (ru) | Способ получения кристаллов со структурой берилла | |
JPH0316988A (ja) | 化合物半導体単結晶製造装置 | |
JPS57129896A (en) | Liquid phase epitaxial growing apparatus | |
JPS5997591A (ja) | 単結晶育成法および装置 | |
JPS643099A (en) | Production of superconducting material | |
GB1491122A (en) | Synthetic apparatus and method | |
JPS56155094A (en) | Production of single crystal of semiconductor |