JPS57177537A - Isolation of semiconductor element - Google Patents

Isolation of semiconductor element

Info

Publication number
JPS57177537A
JPS57177537A JP56062882A JP6288281A JPS57177537A JP S57177537 A JPS57177537 A JP S57177537A JP 56062882 A JP56062882 A JP 56062882A JP 6288281 A JP6288281 A JP 6288281A JP S57177537 A JPS57177537 A JP S57177537A
Authority
JP
Japan
Prior art keywords
layer
ion
insulating film
activated
element isolation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56062882A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6317227B2 (enrdf_load_stackoverflow
Inventor
Hideki Yakida
Takeshi Konuma
Toshio Sugawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP56062882A priority Critical patent/JPS57177537A/ja
Publication of JPS57177537A publication Critical patent/JPS57177537A/ja
Publication of JPS6317227B2 publication Critical patent/JPS6317227B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP56062882A 1981-04-24 1981-04-24 Isolation of semiconductor element Granted JPS57177537A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56062882A JPS57177537A (en) 1981-04-24 1981-04-24 Isolation of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56062882A JPS57177537A (en) 1981-04-24 1981-04-24 Isolation of semiconductor element

Publications (2)

Publication Number Publication Date
JPS57177537A true JPS57177537A (en) 1982-11-01
JPS6317227B2 JPS6317227B2 (enrdf_load_stackoverflow) 1988-04-13

Family

ID=13213073

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56062882A Granted JPS57177537A (en) 1981-04-24 1981-04-24 Isolation of semiconductor element

Country Status (1)

Country Link
JP (1) JPS57177537A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6155938A (ja) * 1984-08-27 1986-03-20 Yokogawa Hokushin Electric Corp 電子素子の分離法
JPS61182245A (ja) * 1985-01-31 1986-08-14 アメリカン　マイクロシステムズ　インコーポレイテッド 複数の半導体集積回路を接続する薄膜状の相互接続信号面を形成する方法及び素子
JPS62298182A (ja) * 1986-06-18 1987-12-25 Hitachi Ltd 半導体装置の製造方法
JPH0439968A (ja) * 1990-06-05 1992-02-10 Mitsubishi Electric Corp 半導体装置
WO2008070624A1 (en) * 2006-12-06 2008-06-12 Spansion Llc Inert barrier region for source/drain regions of sonos memory devices

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5153489A (en) * 1974-11-06 1976-05-11 Hitachi Ltd Handotaisochino seizohoho

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5153489A (en) * 1974-11-06 1976-05-11 Hitachi Ltd Handotaisochino seizohoho

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6155938A (ja) * 1984-08-27 1986-03-20 Yokogawa Hokushin Electric Corp 電子素子の分離法
JPS61182245A (ja) * 1985-01-31 1986-08-14 アメリカン　マイクロシステムズ　インコーポレイテッド 複数の半導体集積回路を接続する薄膜状の相互接続信号面を形成する方法及び素子
JPS62298182A (ja) * 1986-06-18 1987-12-25 Hitachi Ltd 半導体装置の製造方法
JPH0439968A (ja) * 1990-06-05 1992-02-10 Mitsubishi Electric Corp 半導体装置
WO2008070624A1 (en) * 2006-12-06 2008-06-12 Spansion Llc Inert barrier region for source/drain regions of sonos memory devices
US9171936B2 (en) 2006-12-06 2015-10-27 Cypress Semiconductor Corporation Barrier region underlying source/drain regions for dual-bit memory devices

Also Published As

Publication number Publication date
JPS6317227B2 (enrdf_load_stackoverflow) 1988-04-13

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