JPS57176842A - Insulated gate type field effect transistor circuit - Google Patents

Insulated gate type field effect transistor circuit

Info

Publication number
JPS57176842A
JPS57176842A JP57004370A JP437082A JPS57176842A JP S57176842 A JPS57176842 A JP S57176842A JP 57004370 A JP57004370 A JP 57004370A JP 437082 A JP437082 A JP 437082A JP S57176842 A JPS57176842 A JP S57176842A
Authority
JP
Japan
Prior art keywords
source
voltage
terminal
fetq3
fetq2
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57004370A
Other languages
Japanese (ja)
Other versions
JPS623613B2 (en
Inventor
Toshio Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP57004370A priority Critical patent/JPS57176842A/en
Publication of JPS57176842A publication Critical patent/JPS57176842A/en
Publication of JPS623613B2 publication Critical patent/JPS623613B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/096—Synchronous circuits, i.e. using clock signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To enable high-speed operation with low supply voltage by constituting a titled circuit of the first and second MOSFET for loading, an MOSFET for driving and a capacity element. CONSTITUTION:The drain and gate of the first MOSFETQ1 for loading and the drain of the second MOSFETQ2 for loading are connected to a high level power source E0. The source of the FETQ1 and the gate of the FETQ2 is connected in common and connected to one end of a capacity element C and an output terminal E1. Another end of the element C is connected to the source of the FETQ2 and the drain of an MOSFETQ3 for driving. The source of the FETQ3 is connected to a grounding terminal and pulse signals phi are given repeatedly to the gate terminal P of the FETQ3. When the FETQ3 is on-state, charge current flows to the element C and voltage between terminals of the element C becomes Ec. When the Q3 is turned off, the FETQ2 raises the potential of the low potential terminal of the element C and gives voltage source of Ec+E0 to the terminal E1. Discharge current is supplied from the element C to the load and high-speed operation is enabled to voltage exceeding power source voltage.
JP57004370A 1982-01-14 1982-01-14 Insulated gate type field effect transistor circuit Granted JPS57176842A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57004370A JPS57176842A (en) 1982-01-14 1982-01-14 Insulated gate type field effect transistor circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57004370A JPS57176842A (en) 1982-01-14 1982-01-14 Insulated gate type field effect transistor circuit

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP48016325A Division JPS5937615B2 (en) 1973-02-08 1973-02-08 Insulated gate field effect transistor circuit

Publications (2)

Publication Number Publication Date
JPS57176842A true JPS57176842A (en) 1982-10-30
JPS623613B2 JPS623613B2 (en) 1987-01-26

Family

ID=11582476

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57004370A Granted JPS57176842A (en) 1982-01-14 1982-01-14 Insulated gate type field effect transistor circuit

Country Status (1)

Country Link
JP (1) JPS57176842A (en)

Also Published As

Publication number Publication date
JPS623613B2 (en) 1987-01-26

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