JPS57176841A - Integrated structure of high tension complementary mos inverter array - Google Patents
Integrated structure of high tension complementary mos inverter arrayInfo
- Publication number
- JPS57176841A JPS57176841A JP56061994A JP6199481A JPS57176841A JP S57176841 A JPS57176841 A JP S57176841A JP 56061994 A JP56061994 A JP 56061994A JP 6199481 A JP6199481 A JP 6199481A JP S57176841 A JPS57176841 A JP S57176841A
- Authority
- JP
- Japan
- Prior art keywords
- high tension
- terminals
- type
- input
- resistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000000295 complement effect Effects 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000010354 integration Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
- H03K19/0948—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET using CMOS or complementary insulated gate field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electronic Switches (AREA)
- Logic Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56061994A JPS57176841A (en) | 1981-04-24 | 1981-04-24 | Integrated structure of high tension complementary mos inverter array |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56061994A JPS57176841A (en) | 1981-04-24 | 1981-04-24 | Integrated structure of high tension complementary mos inverter array |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57176841A true JPS57176841A (en) | 1982-10-30 |
| JPH0221175B2 JPH0221175B2 (enrdf_load_stackoverflow) | 1990-05-14 |
Family
ID=13187258
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56061994A Granted JPS57176841A (en) | 1981-04-24 | 1981-04-24 | Integrated structure of high tension complementary mos inverter array |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57176841A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008022539A (ja) * | 2006-06-05 | 2008-01-31 | Samsung Electronics Co Ltd | レベルシフト回路およびこれを搭載した表示装置 |
-
1981
- 1981-04-24 JP JP56061994A patent/JPS57176841A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008022539A (ja) * | 2006-06-05 | 2008-01-31 | Samsung Electronics Co Ltd | レベルシフト回路およびこれを搭載した表示装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0221175B2 (enrdf_load_stackoverflow) | 1990-05-14 |
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