JPS57173228A - Mos-fet switch - Google Patents

Mos-fet switch

Info

Publication number
JPS57173228A
JPS57173228A JP56058565A JP5856581A JPS57173228A JP S57173228 A JPS57173228 A JP S57173228A JP 56058565 A JP56058565 A JP 56058565A JP 5856581 A JP5856581 A JP 5856581A JP S57173228 A JPS57173228 A JP S57173228A
Authority
JP
Japan
Prior art keywords
fets
mos
back gates
source
gates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56058565A
Other languages
English (en)
Inventor
Kazumi Kuwabara
Isao Fukushima
Kazuo Hoya
Keiichi Itoigawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Microcomputer System Ltd
Hitachi Ltd
Original Assignee
Hitachi Ltd
Hitachi Microcomputer Engineering Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Microcomputer Engineering Ltd filed Critical Hitachi Ltd
Priority to JP56058565A priority Critical patent/JPS57173228A/ja
Publication of JPS57173228A publication Critical patent/JPS57173228A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
JP56058565A 1981-04-20 1981-04-20 Mos-fet switch Pending JPS57173228A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56058565A JPS57173228A (en) 1981-04-20 1981-04-20 Mos-fet switch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56058565A JPS57173228A (en) 1981-04-20 1981-04-20 Mos-fet switch

Publications (1)

Publication Number Publication Date
JPS57173228A true JPS57173228A (en) 1982-10-25

Family

ID=13087966

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56058565A Pending JPS57173228A (en) 1981-04-20 1981-04-20 Mos-fet switch

Country Status (1)

Country Link
JP (1) JPS57173228A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59201521A (ja) * 1983-04-28 1984-11-15 Nec Corp 信号転送回路装置
ES2263357A1 (es) * 2004-11-16 2006-12-01 Diseño De Sistemas En Silicio, S.A. Circuito conmutador para la obtencion de un rango dinamico duplicado.
JP2008160673A (ja) * 2006-12-26 2008-07-10 Sony Corp スイッチ回路、可変コンデンサ回路およびそのic

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59201521A (ja) * 1983-04-28 1984-11-15 Nec Corp 信号転送回路装置
JPH0334253B2 (ja) * 1983-04-28 1991-05-22 Nippon Electric Co
ES2263357A1 (es) * 2004-11-16 2006-12-01 Diseño De Sistemas En Silicio, S.A. Circuito conmutador para la obtencion de un rango dinamico duplicado.
WO2006053916A3 (es) * 2004-11-16 2008-06-12 Diseno Sistemas Silicio Sa Circuito conmutador para la obtención de un rango dinámico duplicado
EA010175B1 (ru) * 2004-11-16 2008-06-30 Дисеньо Де Системас Эн Силисио, С.А. Переключающая схема для получения удвоенного динамического диапазона
US7619461B2 (en) 2004-11-16 2009-11-17 Diseño de Sistemasen Silicio, S.A. Switching circuit which is used to obtain a doubled dynamic range
JP4859841B2 (ja) * 2004-11-16 2012-01-25 マーベル ヒスパニア エス.エル. 2倍のダイナミックレンジを得るために用いられるスイッチング回路
KR101172043B1 (ko) 2004-11-16 2012-08-08 디세노 데 시스테마스 엔 실리시오, 에스.에이. 더블 다이나믹 레인지를 얻기 위해 사용되는 스위칭 회로
JP2008160673A (ja) * 2006-12-26 2008-07-10 Sony Corp スイッチ回路、可変コンデンサ回路およびそのic

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