JPS57172769A - Manufacture of inp insulating gate-type field effect transistor - Google Patents
Manufacture of inp insulating gate-type field effect transistorInfo
- Publication number
- JPS57172769A JPS57172769A JP5702881A JP5702881A JPS57172769A JP S57172769 A JPS57172769 A JP S57172769A JP 5702881 A JP5702881 A JP 5702881A JP 5702881 A JP5702881 A JP 5702881A JP S57172769 A JPS57172769 A JP S57172769A
- Authority
- JP
- Japan
- Prior art keywords
- film
- aqueous solution
- oxide film
- regions
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 abstract 3
- 239000007864 aqueous solution Substances 0.000 abstract 3
- 239000007789 gas Substances 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 abstract 1
- 230000002378 acidificating effect Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000011259 mixed solution Substances 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000243 solution Substances 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
- 235000002906 tartaric acid Nutrition 0.000 abstract 1
- 239000011975 tartaric acid Substances 0.000 abstract 1
- 238000007738 vacuum evaporation Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Abstract
PURPOSE:To obtain a gate insulating film having superior interface characteristics by a method wherein an InP positive oxide film formed in a mixed liquid of an acidic aqueous solution or a basic aqueous solution and a nonaqueous solution adjusting pH to 5-7 is thermally treated in hydrogen or inert gas at 150- 250 deg.C for 5-20min. CONSTITUTION:A P type source and drain regions 2 and 3 are formed by diffusion at the surface layer section of an N type InP substrate 1 and vacuum evaporation is applied to Au-Zn and Au-Su at a part of the regions 2 and 3 and at a part of the rear of the substrate 1 respectively and heat treatment is applied in N2 gas at 400 deg.C for one minute to form ohmic electrodes 5, 6, 8. Next, positive oxidation is done to the surface of an exposed semiconductor layer except the regions of the electrodes 5 and 6 in a mixed solution having a ratio of 1:3 to a 3% tartaric acid aqueous solution forming pH as 5-7 and propylene glycol and a positive oxide film 4 with a predetermined thickness is obtained. After that, heat treatment is done in H2 or N2 gas at 150-250 deg.C for 5-20min to form the film 4 as a gate oxide film and an Au gate electrode 7 is formed on the film 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5702881A JPS57172769A (en) | 1981-04-17 | 1981-04-17 | Manufacture of inp insulating gate-type field effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5702881A JPS57172769A (en) | 1981-04-17 | 1981-04-17 | Manufacture of inp insulating gate-type field effect transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57172769A true JPS57172769A (en) | 1982-10-23 |
| JPS6221278B2 JPS6221278B2 (en) | 1987-05-12 |
Family
ID=13043972
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5702881A Granted JPS57172769A (en) | 1981-04-17 | 1981-04-17 | Manufacture of inp insulating gate-type field effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57172769A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2347789B (en) * | 1999-03-01 | 2002-07-03 | Nec Corp | Complementary integratted circuit |
-
1981
- 1981-04-17 JP JP5702881A patent/JPS57172769A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2347789B (en) * | 1999-03-01 | 2002-07-03 | Nec Corp | Complementary integratted circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6221278B2 (en) | 1987-05-12 |
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