JPS57170578A - Manufacture of crystalline substrate - Google Patents

Manufacture of crystalline substrate

Info

Publication number
JPS57170578A
JPS57170578A JP56054997A JP5499781A JPS57170578A JP S57170578 A JPS57170578 A JP S57170578A JP 56054997 A JP56054997 A JP 56054997A JP 5499781 A JP5499781 A JP 5499781A JP S57170578 A JPS57170578 A JP S57170578A
Authority
JP
Japan
Prior art keywords
solution
crucible
substrate
molten
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56054997A
Other languages
Japanese (ja)
Inventor
Masanaru Abe
Mitsuo Iida
Kazue Sekikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56054997A priority Critical patent/JPS57170578A/en
Publication of JPS57170578A publication Critical patent/JPS57170578A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Press-Shaping Or Shaping Using Conveyers (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To form a strip-shaped substrate by flowing out molten material solution in crucible via a depression plate from a rectangular nozzle port of a material without leakage with molten crystalline material solution and soldifying according to the nozzle shape. CONSTITUTION:Molten Si solution 6 is formed by RF heating in a BN crucible 1. A depression plate 3 extracts the solution 6 at the position C exceeding a material inlet 4 from a rectangular nozzle 2 having a=500mum and b-approx. 100mm., thereby growing a strip crystal having 100mm.X500mumX1,000mm. on a supporting plate 5. According to this method, the structure is simple, and an Si substrate of large area can be obtained efficiently with respect to the diameter of the crucible. Further, the substrate can be obtained in a short time.
JP56054997A 1981-04-14 1981-04-14 Manufacture of crystalline substrate Pending JPS57170578A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56054997A JPS57170578A (en) 1981-04-14 1981-04-14 Manufacture of crystalline substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56054997A JPS57170578A (en) 1981-04-14 1981-04-14 Manufacture of crystalline substrate

Publications (1)

Publication Number Publication Date
JPS57170578A true JPS57170578A (en) 1982-10-20

Family

ID=12986292

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56054997A Pending JPS57170578A (en) 1981-04-14 1981-04-14 Manufacture of crystalline substrate

Country Status (1)

Country Link
JP (1) JPS57170578A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0484467A (en) * 1990-07-27 1992-03-17 Mitsubishi Electric Corp Manufacture of solar cell

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0484467A (en) * 1990-07-27 1992-03-17 Mitsubishi Electric Corp Manufacture of solar cell

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