JPS57166026A - Manufacture of indium antimony group composite crystal thin-film - Google Patents
Manufacture of indium antimony group composite crystal thin-filmInfo
- Publication number
- JPS57166026A JPS57166026A JP56050294A JP5029481A JPS57166026A JP S57166026 A JPS57166026 A JP S57166026A JP 56050294 A JP56050294 A JP 56050294A JP 5029481 A JP5029481 A JP 5029481A JP S57166026 A JPS57166026 A JP S57166026A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- thin
- composite crystal
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title abstract 6
- 239000010409 thin film Substances 0.000 title abstract 5
- 239000002131 composite material Substances 0.000 title abstract 3
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical group [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 5
- -1 InSb compound Chemical class 0.000 abstract 2
- 239000010408 film Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 238000010884 ion-beam technique Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02549—Antimonides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Hall/Mr Elements (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56050294A JPS57166026A (en) | 1981-04-03 | 1981-04-03 | Manufacture of indium antimony group composite crystal thin-film |
| US06/361,939 US4468415A (en) | 1981-03-30 | 1982-03-25 | Indium-antimony complex crystal semiconductor and process for production thereof |
| DE8282102605T DE3271874D1 (en) | 1981-03-30 | 1982-03-27 | Indium-antimony complex crystal semiconductor and process for production thereof |
| AT82102605T ATE20629T1 (de) | 1981-03-30 | 1982-03-27 | Indium-antimon-halbleiter mit komplexer kristalliner struktur und verfahren zu seiner herstellung. |
| EP82102605A EP0062818B2 (en) | 1981-03-30 | 1982-03-27 | Process of producing a hall element or magnetoresistive element comprising an indium-antimony complex crystal semiconductor |
| KR8201347A KR860000161B1 (ko) | 1981-03-30 | 1982-03-29 | 인듐 안티몬계 복합 결정반도체 및 그 제조방법 |
| US06/620,645 US4539178A (en) | 1981-03-30 | 1984-06-14 | Indium-antimony complex crystal semiconductor and process for production thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56050294A JPS57166026A (en) | 1981-04-03 | 1981-04-03 | Manufacture of indium antimony group composite crystal thin-film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57166026A true JPS57166026A (en) | 1982-10-13 |
| JPH0113211B2 JPH0113211B2 (enExample) | 1989-03-03 |
Family
ID=12854879
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56050294A Granted JPS57166026A (en) | 1981-03-30 | 1981-04-03 | Manufacture of indium antimony group composite crystal thin-film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57166026A (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2006070826A1 (ja) | 2004-12-28 | 2008-08-07 | 旭化成エレクトロニクス株式会社 | 磁気方式回転角センサ、および、角度情報処理装置 |
| JP7490432B2 (ja) | 2020-04-13 | 2024-05-27 | キヤノン株式会社 | 縮小光学系および撮像装置 |
-
1981
- 1981-04-03 JP JP56050294A patent/JPS57166026A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0113211B2 (enExample) | 1989-03-03 |
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