JPS6412420A - Manufacture of superconducting film - Google Patents
Manufacture of superconducting filmInfo
- Publication number
- JPS6412420A JPS6412420A JP62167620A JP16762087A JPS6412420A JP S6412420 A JPS6412420 A JP S6412420A JP 62167620 A JP62167620 A JP 62167620A JP 16762087 A JP16762087 A JP 16762087A JP S6412420 A JPS6412420 A JP S6412420A
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxide
- superconducting
- oxide film
- implantation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
PURPOSE:To manufacture a superconducting oxide film easily with high reproductivity by forming an oxide film using at first two of the three materials and then ion implanting the rest of the material forming the superconducting film. CONSTITUTION:An oxide film 2 is formed on the surface of a substrate 1 using two of the materials of group IIIa metal or its oxide, barium or its oxide, and copper or its oxide by vacuum evaporation and sputtering processes. Ion implantation is then performed to the film 2 using the material other than the two used in the above process, namely using yttrium or barium. Using an ion implanter and controlling the implantation amount accurately, the composition of the film 2 can be made uniform. Further, since the implantation is performed at a relatively low temperature, crystal structure of the film can be grown as the orthorhombic system. In this way a superconducting oxide film can be manufactured easily with high reproductivity.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62167620A JPS6412420A (en) | 1987-07-03 | 1987-07-03 | Manufacture of superconducting film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62167620A JPS6412420A (en) | 1987-07-03 | 1987-07-03 | Manufacture of superconducting film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6412420A true JPS6412420A (en) | 1989-01-17 |
Family
ID=15853164
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62167620A Pending JPS6412420A (en) | 1987-07-03 | 1987-07-03 | Manufacture of superconducting film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6412420A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5709249A (en) * | 1994-06-27 | 1998-01-20 | Yazaki Corporation | Locking structure |
-
1987
- 1987-07-03 JP JP62167620A patent/JPS6412420A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5709249A (en) * | 1994-06-27 | 1998-01-20 | Yazaki Corporation | Locking structure |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0285132A3 (en) | Method for producing thin film of oxide superconductor | |
JPS6451685A (en) | Formation of superconducting circuit | |
JPS5727079A (en) | Manufacture of josephson element of oxide superconductor | |
JPS6412420A (en) | Manufacture of superconducting film | |
JPS6421973A (en) | Device for manufacturing superconductive material | |
JPS6467825A (en) | Formation of oxide superconductor thin film | |
JPS6472533A (en) | Manufacture of single crystal semiconductor substrate | |
JPS6412428A (en) | Manufacture of superconducting film | |
JPS6455879A (en) | Method for forming contact part between semiconductor and superconductor | |
JPS5614408A (en) | Manufacture of solid electrolyte | |
JPS6417314A (en) | Thin film superconductor | |
JPS6410522A (en) | Manufacture of oxide superconductor thin film | |
JPS6457521A (en) | Manufacture of superconducting thin film | |
JPS6457528A (en) | Manufacture of high-temperature superconductive thin film | |
JPS6489572A (en) | Manufacture of high temperature superconducting thin film | |
JPH01242478A (en) | Method of stabilizing oxygen lack type superconductor | |
JPS6489571A (en) | Semiconductor device and manufacture thereof | |
JPS5688322A (en) | Processing method for semiconductor substrate | |
JPS6459974A (en) | Device for manufacturing superconducting material | |
JPS6430279A (en) | Superconducting device and manufacture thereof | |
JPS6489482A (en) | Formation of high-temperature superconducting thin-film of oxide | |
JPS57166026A (en) | Manufacture of indium antimony group composite crystal thin-film | |
JPS643923A (en) | Manufacture of superconductive thin film | |
JPS57186352A (en) | Forming method for gallium arsenide active layer | |
JPS6451683A (en) | Formation of superconducting thin film |