JPS57162337A - Charged particle beam type lithographic method - Google Patents

Charged particle beam type lithographic method

Info

Publication number
JPS57162337A
JPS57162337A JP4739481A JP4739481A JPS57162337A JP S57162337 A JPS57162337 A JP S57162337A JP 4739481 A JP4739481 A JP 4739481A JP 4739481 A JP4739481 A JP 4739481A JP S57162337 A JPS57162337 A JP S57162337A
Authority
JP
Japan
Prior art keywords
emitting regions
emitting
emitted
charged particle
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4739481A
Other languages
Japanese (ja)
Other versions
JPH0472375B2 (en
Inventor
Shinya Hasegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4739481A priority Critical patent/JPS57162337A/en
Publication of JPS57162337A publication Critical patent/JPS57162337A/en
Publication of JPH0472375B2 publication Critical patent/JPH0472375B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To form an ultrafine pattern with a charged particle beam by sequentially repeatedly emitting the regions to be emitted until sufficiently large dissolving velocity ratio to a developer between the emitter part and non-emitted part of a charged particle sensitive layer is incorporated. CONSTITUTION:A figure is divided into emitting regions of the size of several tens nm to several tens mum, charged particle beam is emitted to the first emitting region 5 of the first set 4 for the time t0 not to produce thermal change of properties with more than two emitting regions as a set isolated at a distance of 4(Dt0)<1/2> between the emitting regions, where Dcm/sec represents thermal diffusion rate obtained by dividing the thermal conductivity of a substrate by the product of a specific heat CJule/g.deg and density rhog/cm, and t0sec represents the continuous emitting time of the respective emitting regions. Therafter, next emitting regions 6, 7 are sequentially continued as designated by an arrow 8, and all the emitting regions in the first set 4 are emitted. While the other emitting regions are thus emitted. The first emitting regions 5 are cooled by the thermal conduction in the substrate, and after the emission of the first set 4 is completed, it is transferred to the second set 11, and similar procedure is continued to the first set 4.
JP4739481A 1981-03-31 1981-03-31 Charged particle beam type lithographic method Granted JPS57162337A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4739481A JPS57162337A (en) 1981-03-31 1981-03-31 Charged particle beam type lithographic method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4739481A JPS57162337A (en) 1981-03-31 1981-03-31 Charged particle beam type lithographic method

Publications (2)

Publication Number Publication Date
JPS57162337A true JPS57162337A (en) 1982-10-06
JPH0472375B2 JPH0472375B2 (en) 1992-11-18

Family

ID=12773888

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4739481A Granted JPS57162337A (en) 1981-03-31 1981-03-31 Charged particle beam type lithographic method

Country Status (1)

Country Link
JP (1) JPS57162337A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5996728A (en) * 1982-11-25 1984-06-04 Fujitsu Ltd Method for formation of resist pattern
JPS60130826A (en) * 1983-12-20 1985-07-12 Toshiba Corp Charged beam drawing method
JPS60173833A (en) * 1984-02-13 1985-09-07 Nippon Telegr & Teleph Corp <Ntt> Method for apparatus for forming pattern
JPS60196941A (en) * 1984-02-29 1985-10-05 Fujitsu Ltd Electron beam exposure
JPS60251617A (en) * 1984-05-28 1985-12-12 Toshiba Corp Formation of resist pattern

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5996728A (en) * 1982-11-25 1984-06-04 Fujitsu Ltd Method for formation of resist pattern
JPH0568848B2 (en) * 1982-11-25 1993-09-29 Fujitsu Ltd
JPS60130826A (en) * 1983-12-20 1985-07-12 Toshiba Corp Charged beam drawing method
JPS60173833A (en) * 1984-02-13 1985-09-07 Nippon Telegr & Teleph Corp <Ntt> Method for apparatus for forming pattern
JPS60196941A (en) * 1984-02-29 1985-10-05 Fujitsu Ltd Electron beam exposure
JPS60251617A (en) * 1984-05-28 1985-12-12 Toshiba Corp Formation of resist pattern

Also Published As

Publication number Publication date
JPH0472375B2 (en) 1992-11-18

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