JPS57161541A - Ion sensor - Google Patents
Ion sensorInfo
- Publication number
- JPS57161541A JPS57161541A JP56046192A JP4619281A JPS57161541A JP S57161541 A JPS57161541 A JP S57161541A JP 56046192 A JP56046192 A JP 56046192A JP 4619281 A JP4619281 A JP 4619281A JP S57161541 A JPS57161541 A JP S57161541A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- term
- gate electrode
- changing
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Molecular Biology (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56046192A JPS57161541A (en) | 1981-03-31 | 1981-03-31 | Ion sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56046192A JPS57161541A (en) | 1981-03-31 | 1981-03-31 | Ion sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57161541A true JPS57161541A (en) | 1982-10-05 |
Family
ID=12740186
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56046192A Pending JPS57161541A (en) | 1981-03-31 | 1981-03-31 | Ion sensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57161541A (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6093955U (ja) * | 1983-12-03 | 1985-06-26 | 株式会社堀場製作所 | Isfetセンサ |
JPH01201152A (ja) * | 1988-02-05 | 1989-08-14 | Seitai Kinou Riyou Kagakuhin Shinseizou Gijutsu Kenkyu Kumiai | 差動型半導体化学センサ |
EP2017609A1 (en) * | 2007-07-18 | 2009-01-21 | Université Catholique de Louvain | Method and device for high sensitivity and quantitative detection of chemical/biological molecules |
JP2012159511A (ja) * | 2011-02-02 | 2012-08-23 | Robert Bosch Gmbh | 化学感応性電界効果トランジスタの少なくとも1つの動作の仕方を監視するための方法および監視装置 |
US8502277B2 (en) | 2003-08-29 | 2013-08-06 | Japan Science And Technology Agency | Field-effect transistor, single-electron transistor and sensor using the same |
WO2019230917A1 (ja) * | 2018-05-31 | 2019-12-05 | 国立大学法人静岡大学 | イオン濃度計測装置 |
-
1981
- 1981-03-31 JP JP56046192A patent/JPS57161541A/ja active Pending
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6093955U (ja) * | 1983-12-03 | 1985-06-26 | 株式会社堀場製作所 | Isfetセンサ |
JPH0345178Y2 (ja) * | 1983-12-03 | 1991-09-24 | ||
JPH01201152A (ja) * | 1988-02-05 | 1989-08-14 | Seitai Kinou Riyou Kagakuhin Shinseizou Gijutsu Kenkyu Kumiai | 差動型半導体化学センサ |
US9506892B2 (en) | 2003-08-29 | 2016-11-29 | Japan Science And Technology Agency | Field-effect transistor, single-electron transistor and sensor using the same |
US8502277B2 (en) | 2003-08-29 | 2013-08-06 | Japan Science And Technology Agency | Field-effect transistor, single-electron transistor and sensor using the same |
US8766326B2 (en) | 2003-08-29 | 2014-07-01 | Japan Science And Technology Agency | Field-effect transistor, single-electron transistor and sensor |
US8772099B2 (en) | 2003-08-29 | 2014-07-08 | Japan Science And Technology Agency | Method of use of a field-effect transistor, single-electron transistor and sensor |
WO2009010584A1 (en) * | 2007-07-18 | 2009-01-22 | Université Catholique de Louvain | Method and device for high sensitivity and quantitative detection of chemical/biological molecules |
EP2017609A1 (en) * | 2007-07-18 | 2009-01-21 | Université Catholique de Louvain | Method and device for high sensitivity and quantitative detection of chemical/biological molecules |
JP2012159511A (ja) * | 2011-02-02 | 2012-08-23 | Robert Bosch Gmbh | 化学感応性電界効果トランジスタの少なくとも1つの動作の仕方を監視するための方法および監視装置 |
WO2019230917A1 (ja) * | 2018-05-31 | 2019-12-05 | 国立大学法人静岡大学 | イオン濃度計測装置 |
JPWO2019230917A1 (ja) * | 2018-05-31 | 2021-08-19 | 国立大学法人静岡大学 | イオン濃度計測装置 |
US11828721B2 (en) | 2018-05-31 | 2023-11-28 | National University Corporation Shizuoka University | Ion concentration measuring device |
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