JPS57158369A - Formation of dielectric film by plasma vapor phase method - Google Patents
Formation of dielectric film by plasma vapor phase methodInfo
- Publication number
- JPS57158369A JPS57158369A JP4435081A JP4435081A JPS57158369A JP S57158369 A JPS57158369 A JP S57158369A JP 4435081 A JP4435081 A JP 4435081A JP 4435081 A JP4435081 A JP 4435081A JP S57158369 A JPS57158369 A JP S57158369A
- Authority
- JP
- Japan
- Prior art keywords
- furnace
- heating
- thin films
- vapor phase
- dielectric film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title abstract 2
- 239000012808 vapor phase Substances 0.000 title abstract 2
- 230000015572 biosynthetic process Effects 0.000 title 1
- 238000010438 heat treatment Methods 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 239000010409 thin film Substances 0.000 abstract 3
- 230000003213 activating effect Effects 0.000 abstract 2
- 239000012159 carrier gas Substances 0.000 abstract 2
- 239000010408 film Substances 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 239000000126 substance Substances 0.000 abstract 2
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- 229910052788 barium Inorganic materials 0.000 abstract 1
- 229910052797 bismuth Inorganic materials 0.000 abstract 1
- 229910052791 calcium Inorganic materials 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 229910052745 lead Inorganic materials 0.000 abstract 1
- 229910052744 lithium Inorganic materials 0.000 abstract 1
- 229910052749 magnesium Inorganic materials 0.000 abstract 1
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 229910052758 niobium Inorganic materials 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- 150000003839 salts Chemical class 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 239000007858 starting material Substances 0.000 abstract 1
- 229910052712 strontium Inorganic materials 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- 229910052718 tin Inorganic materials 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 229910052726 zirconium Inorganic materials 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Inorganic Insulating Materials (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4435081A JPS57158369A (en) | 1981-03-26 | 1981-03-26 | Formation of dielectric film by plasma vapor phase method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4435081A JPS57158369A (en) | 1981-03-26 | 1981-03-26 | Formation of dielectric film by plasma vapor phase method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57158369A true JPS57158369A (en) | 1982-09-30 |
| JPH0319299B2 JPH0319299B2 (enExample) | 1991-03-14 |
Family
ID=12689060
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4435081A Granted JPS57158369A (en) | 1981-03-26 | 1981-03-26 | Formation of dielectric film by plasma vapor phase method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57158369A (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0257686A (ja) * | 1988-08-22 | 1990-02-27 | Matsushita Electric Ind Co Ltd | チタン酸鉛薄膜の製造方法 |
| EP0760400A3 (en) * | 1995-08-22 | 1997-04-02 | Sony Corporation | Process for producing bismuth compounds, and bismuth compounds |
| CN104651805A (zh) * | 2015-02-04 | 2015-05-27 | 昆明理工大学 | 一种超声波喷雾微波管式炉及运用 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5128600A (ja) * | 1974-09-05 | 1976-03-10 | Kitasato Gakuen | Kayoseipurushianburuunoseizohoho |
| JPS5176596A (en) * | 1974-11-22 | 1976-07-02 | Euratom | Hakumakuso no taisekihoho oyobi sochi |
| JPS5589469A (en) * | 1978-09-11 | 1980-07-07 | Honeywell Inc | Adhering of optically transparent conductive metal oxide membrane to substrate plate |
-
1981
- 1981-03-26 JP JP4435081A patent/JPS57158369A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5128600A (ja) * | 1974-09-05 | 1976-03-10 | Kitasato Gakuen | Kayoseipurushianburuunoseizohoho |
| JPS5176596A (en) * | 1974-11-22 | 1976-07-02 | Euratom | Hakumakuso no taisekihoho oyobi sochi |
| JPS5589469A (en) * | 1978-09-11 | 1980-07-07 | Honeywell Inc | Adhering of optically transparent conductive metal oxide membrane to substrate plate |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0257686A (ja) * | 1988-08-22 | 1990-02-27 | Matsushita Electric Ind Co Ltd | チタン酸鉛薄膜の製造方法 |
| EP0760400A3 (en) * | 1995-08-22 | 1997-04-02 | Sony Corporation | Process for producing bismuth compounds, and bismuth compounds |
| US5976624A (en) * | 1995-08-22 | 1999-11-02 | Sony Corporation | Process for producing bismuth compounds, and bismuth compounds |
| CN104651805A (zh) * | 2015-02-04 | 2015-05-27 | 昆明理工大学 | 一种超声波喷雾微波管式炉及运用 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0319299B2 (enExample) | 1991-03-14 |
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