JPS5715418A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5715418A
JPS5715418A JP8948580A JP8948580A JPS5715418A JP S5715418 A JPS5715418 A JP S5715418A JP 8948580 A JP8948580 A JP 8948580A JP 8948580 A JP8948580 A JP 8948580A JP S5715418 A JPS5715418 A JP S5715418A
Authority
JP
Japan
Prior art keywords
added
specified
thickness
forming region
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8948580A
Other languages
English (en)
Inventor
Shigeru Okamura
Hidetoshi Nishi
Tsuguo Inada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8948580A priority Critical patent/JPS5715418A/ja
Publication of JPS5715418A publication Critical patent/JPS5715418A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2258—Diffusion into or out of AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
JP8948580A 1980-07-01 1980-07-01 Manufacture of semiconductor device Pending JPS5715418A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8948580A JPS5715418A (en) 1980-07-01 1980-07-01 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8948580A JPS5715418A (en) 1980-07-01 1980-07-01 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5715418A true JPS5715418A (en) 1982-01-26

Family

ID=13972037

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8948580A Pending JPS5715418A (en) 1980-07-01 1980-07-01 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5715418A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001006552A1 (en) * 1999-07-15 2001-01-25 Hrl Laboratories, Llc Conductivity reduction method for doped compound semiconductors

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001006552A1 (en) * 1999-07-15 2001-01-25 Hrl Laboratories, Llc Conductivity reduction method for doped compound semiconductors
US6444552B1 (en) 1999-07-15 2002-09-03 Hrl Laboratories, Llc Method of reducing the conductivity of a semiconductor and devices made thereby
US6897132B2 (en) * 1999-07-15 2005-05-24 Hrl Laboratories, Llc Method of reducing the conductivity of a semiconductor and devices made thereby

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