JPS5785260A - Manufacture of metal oxide semiconductor transistor - Google Patents
Manufacture of metal oxide semiconductor transistorInfo
- Publication number
- JPS5785260A JPS5785260A JP16080980A JP16080980A JPS5785260A JP S5785260 A JPS5785260 A JP S5785260A JP 16080980 A JP16080980 A JP 16080980A JP 16080980 A JP16080980 A JP 16080980A JP S5785260 A JPS5785260 A JP S5785260A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- oxide film
- region
- shaped
- films
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910044991 metal oxide Inorganic materials 0.000 title 1
- 150000004706 metal oxides Chemical class 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To prevent a short-channel effect by a method wherein a field oxide film is formed in a gate forming prearranged region of a main surface of a semiconductor substrate while the region is oxidized, the oxide film is removed, a concave section is shaped and a gate is formed. CONSTITUTION:A silicon oxide film is coated and laminated to the main surface of the P type silicon substrate 1 and silicon nitride films 17, 17' according to a predetermined pattern are shaped, and the thick silicon oxide films 2f, 12f are molded in a field region and the gate forming prearranged region while using the films 17, 17' as masks. The films 17, 17' and 12f are removed and the concave section is formed in the gate forming prearranged region, a gate oxide film is shaped onto the concave section, a gate electrode 14 is patterned, and the gate oxide film is etched using the electrode 14 as a mask and a gate oxide film 12g according to a prescribed pattern is obtained. An N type diffusion layer is firmed employing the electrode 14 and the film 2f as masks, and the surface is thermally treated and a source regio 13s and a drain region 13d are shaped.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16080980A JPS5785260A (en) | 1980-11-17 | 1980-11-17 | Manufacture of metal oxide semiconductor transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16080980A JPS5785260A (en) | 1980-11-17 | 1980-11-17 | Manufacture of metal oxide semiconductor transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5785260A true JPS5785260A (en) | 1982-05-27 |
Family
ID=15722892
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16080980A Pending JPS5785260A (en) | 1980-11-17 | 1980-11-17 | Manufacture of metal oxide semiconductor transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5785260A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5672524A (en) * | 1995-08-01 | 1997-09-30 | Advanced Micro Devices, Inc. | Three-dimensional complementary field effect transistor process |
-
1980
- 1980-11-17 JP JP16080980A patent/JPS5785260A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5672524A (en) * | 1995-08-01 | 1997-09-30 | Advanced Micro Devices, Inc. | Three-dimensional complementary field effect transistor process |
| US5925909A (en) * | 1995-08-01 | 1999-07-20 | Advanced Micro Devices, Inc. | Three-dimensional complementary field effect transistor process and structures |
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