JPS57154016A - Photosensor array device - Google Patents

Photosensor array device

Info

Publication number
JPS57154016A
JPS57154016A JP56039473A JP3947381A JPS57154016A JP S57154016 A JPS57154016 A JP S57154016A JP 56039473 A JP56039473 A JP 56039473A JP 3947381 A JP3947381 A JP 3947381A JP S57154016 A JPS57154016 A JP S57154016A
Authority
JP
Japan
Prior art keywords
photoelectric conversion
conversion film
contact
film
width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56039473A
Other languages
Japanese (ja)
Inventor
Yukio Ichimura
Ryoji Oritsuki
Toru Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56039473A priority Critical patent/JPS57154016A/en
Publication of JPS57154016A publication Critical patent/JPS57154016A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Facsimile Heads (AREA)
  • Optical Transform (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To prevent deterioration of characteristics of a photoelectric conversion film, by providing a contact for protection of the photoelectric conversion film between the photoelectric conversion film and a common electrode in such a manner that it becomes narrower than width of the photoelectric conversion film. CONSTITUTION:On an individual electrode 9 which is composed of a glass substrate 8 and Cr-Al alloy coveringly formed on the glass substrate 8, a photoelectric conversion film 11 composed of amorphous silicon is coveringly formed to a width wider than a prescribed effective width, and further, on this photoelectric coversion film 11, a contact 15 which is made of such a substance as a thin chromium film is converingly formed to a prescribed width. Further, a common electrode 12 is converingly formed spanning the contact 15 and the photoelectric conversion film 11. It is possible, by doing so, to obtain a clean interface on the pattern between the Cr contact 15 and the amorphous silicon photoelectric conversion film 11, and at the same time, since a defect-free amorphous silicon photoelectric conversion film pattern is obtained, the photoelectric conversion film is prevented from being deteriorated.
JP56039473A 1981-03-20 1981-03-20 Photosensor array device Pending JPS57154016A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56039473A JPS57154016A (en) 1981-03-20 1981-03-20 Photosensor array device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56039473A JPS57154016A (en) 1981-03-20 1981-03-20 Photosensor array device

Publications (1)

Publication Number Publication Date
JPS57154016A true JPS57154016A (en) 1982-09-22

Family

ID=12554029

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56039473A Pending JPS57154016A (en) 1981-03-20 1981-03-20 Photosensor array device

Country Status (1)

Country Link
JP (1) JPS57154016A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS648668A (en) * 1987-06-30 1989-01-12 Sharp Kk Contact type image sensor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS648668A (en) * 1987-06-30 1989-01-12 Sharp Kk Contact type image sensor

Similar Documents

Publication Publication Date Title
JPS55108780A (en) Thin film solar cell
JPS5710992A (en) Semiconductor device and manufacture therefor
JPS57154016A (en) Photosensor array device
JPS56100486A (en) Photoelectric conversion element
JPS5721875A (en) Photosensor
JPS57155539A (en) Mask
JPS57106084A (en) Amorphous silicon diode
JPS55140275A (en) Semiconductor photodetector
JPS57115880A (en) Thin film image pickup device in two dimensions
JPS55115042A (en) Glass mask protection method
JPS5575264A (en) Charge transfer element
JPS55146967A (en) Semiconductor ic device
JPS57145382A (en) Silicon light receiving device
JPS5774945A (en) Photoconductive film for image pick-up tube
JPS5713776A (en) Photovoltaic device
JPS5567211A (en) Production of elastic surface wave device
JPS54132188A (en) Elastic surface wave device
JPS57117274A (en) Photo sensor array device
JPS6472555A (en) Photodiode array
JPS574673A (en) Solid-state image sensor
JPS542076A (en) Manufacture for semiconductor device
JPS57133759A (en) Optical sensor array
JPS5411674A (en) Semiconductor device of mesa type
JPS5694788A (en) Semiconductor light detection device
JPS645061A (en) Manufacture of image sensor