JPS57152167A - Manufacture of schottky barrier gate field effect transistor - Google Patents

Manufacture of schottky barrier gate field effect transistor

Info

Publication number
JPS57152167A
JPS57152167A JP56036984A JP3698481A JPS57152167A JP S57152167 A JPS57152167 A JP S57152167A JP 56036984 A JP56036984 A JP 56036984A JP 3698481 A JP3698481 A JP 3698481A JP S57152167 A JPS57152167 A JP S57152167A
Authority
JP
Japan
Prior art keywords
making use
source
alloys
resist
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56036984A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0235463B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Keiichi Ohata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56036984A priority Critical patent/JPS57152167A/ja
Publication of JPS57152167A publication Critical patent/JPS57152167A/ja
Publication of JPH0235463B2 publication Critical patent/JPH0235463B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6738—Schottky barrier electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP56036984A 1981-03-13 1981-03-13 Manufacture of schottky barrier gate field effect transistor Granted JPS57152167A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56036984A JPS57152167A (en) 1981-03-13 1981-03-13 Manufacture of schottky barrier gate field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56036984A JPS57152167A (en) 1981-03-13 1981-03-13 Manufacture of schottky barrier gate field effect transistor

Publications (2)

Publication Number Publication Date
JPS57152167A true JPS57152167A (en) 1982-09-20
JPH0235463B2 JPH0235463B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-08-10

Family

ID=12485009

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56036984A Granted JPS57152167A (en) 1981-03-13 1981-03-13 Manufacture of schottky barrier gate field effect transistor

Country Status (1)

Country Link
JP (1) JPS57152167A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6024064A (ja) * 1983-07-20 1985-02-06 Agency Of Ind Science & Technol 半導体装置の製造方法
JPS6024065A (ja) * 1983-07-20 1985-02-06 Agency Of Ind Science & Technol 電界効果トランジスタの製造方法
JPS6298780A (ja) * 1985-10-21 1987-05-08 アイテイ−テイ−・インダストリ−ズ・インコ−ポレ−テツド 自己整列したＧａＡｓデジタル集積回路の製造方法
US4975382A (en) * 1989-05-15 1990-12-04 Rohm Co., Ltd. Method of making a self-aligned field-effect transistor by the use of a dummy-gate

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5012985A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-06-01 1975-02-10

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5012985A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-06-01 1975-02-10

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6024064A (ja) * 1983-07-20 1985-02-06 Agency Of Ind Science & Technol 半導体装置の製造方法
JPS6024065A (ja) * 1983-07-20 1985-02-06 Agency Of Ind Science & Technol 電界効果トランジスタの製造方法
JPS6298780A (ja) * 1985-10-21 1987-05-08 アイテイ−テイ−・インダストリ−ズ・インコ−ポレ−テツド 自己整列したＧａＡｓデジタル集積回路の製造方法
US4975382A (en) * 1989-05-15 1990-12-04 Rohm Co., Ltd. Method of making a self-aligned field-effect transistor by the use of a dummy-gate

Also Published As

Publication number Publication date
JPH0235463B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-08-10

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