JPS57149753A - Semiconductor vessel and its manufacture - Google Patents
Semiconductor vessel and its manufactureInfo
- Publication number
- JPS57149753A JPS57149753A JP3506781A JP3506781A JPS57149753A JP S57149753 A JPS57149753 A JP S57149753A JP 3506781 A JP3506781 A JP 3506781A JP 3506781 A JP3506781 A JP 3506781A JP S57149753 A JPS57149753 A JP S57149753A
- Authority
- JP
- Japan
- Prior art keywords
- stem
- holes
- approximately
- brought
- vessel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 2
- 229910000831 Steel Inorganic materials 0.000 abstract 2
- 229910052799 carbon Inorganic materials 0.000 abstract 2
- 239000010410 layer Substances 0.000 abstract 2
- 239000010959 steel Substances 0.000 abstract 2
- 239000002344 surface layer Substances 0.000 abstract 2
- 229910015365 Au—Si Inorganic materials 0.000 abstract 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 230000006835 compression Effects 0.000 abstract 1
- 238000007906 compression Methods 0.000 abstract 1
- 239000006023 eutectic alloy Substances 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 238000003466 welding Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Connections Arranged To Contact A Plurality Of Conductors (AREA)
Abstract
PURPOSE:To miniaturize and lighten the vessel while improving stability at a high temperature by preparing a compression type airtight terminal as the cover of the semiconductor vessel by a steel plate, into which either of C, B, Cr or Mn is contained by 0.1-0.8wt%, changing the surface layer section into the removed layer of the material contained and coating the surface layer section with an oxide film. CONSTITUTION:The airtight terminal 11, which uses an Au-Si eutectic alloy and loads an IC element not shown, is formed by a stem 12 prepared through the press work of the steel plate containing 0.2wt% carbon. A plurality of through-holes 15 for fixing lead terminals are bored circularly to the stem, the stem is entered into a wet hydrogen atmosphere brought to approximately 1,000 deg.C, and held for approximately fifteen min., carbon in a region existing at the depth of approximately 10% of the thickness of the stem 12 is removed, and the region is changed into the decarburized layer 16. The stem is shifted into an oxidizing atmosphere brought to 700 deg.C, the oxide film 17 is formed onto the whole surface, the lead terminals 13 are inserted into the through- holes 15 shaped previously, and the holes are filled with welding glass 14 and brought to airtight conditions. Accordingly, the terminal having high stability at the high temperature can be obtained while being miniaturized and lightened.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3506781A JPS57149753A (en) | 1981-03-11 | 1981-03-11 | Semiconductor vessel and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3506781A JPS57149753A (en) | 1981-03-11 | 1981-03-11 | Semiconductor vessel and its manufacture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57149753A true JPS57149753A (en) | 1982-09-16 |
| JPS637467B2 JPS637467B2 (en) | 1988-02-17 |
Family
ID=12431666
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3506781A Granted JPS57149753A (en) | 1981-03-11 | 1981-03-11 | Semiconductor vessel and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57149753A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3323505A4 (en) | 2015-07-14 | 2019-03-20 | Kyushu University, National University Corporation | Hydrosilylation reaction catalyst |
-
1981
- 1981-03-11 JP JP3506781A patent/JPS57149753A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS637467B2 (en) | 1988-02-17 |
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