JPS57147237A - Heat treatment device - Google Patents

Heat treatment device

Info

Publication number
JPS57147237A
JPS57147237A JP3231181A JP3231181A JPS57147237A JP S57147237 A JPS57147237 A JP S57147237A JP 3231181 A JP3231181 A JP 3231181A JP 3231181 A JP3231181 A JP 3231181A JP S57147237 A JPS57147237 A JP S57147237A
Authority
JP
Japan
Prior art keywords
opening sections
semiconductor wafers
held
lamp
wafers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3231181A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0377657B2 (nl
Inventor
Kazuo Nishiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP3231181A priority Critical patent/JPS57147237A/ja
Publication of JPS57147237A publication Critical patent/JPS57147237A/ja
Publication of JPH0377657B2 publication Critical patent/JPH0377657B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
JP3231181A 1981-03-06 1981-03-06 Heat treatment device Granted JPS57147237A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3231181A JPS57147237A (en) 1981-03-06 1981-03-06 Heat treatment device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3231181A JPS57147237A (en) 1981-03-06 1981-03-06 Heat treatment device

Publications (2)

Publication Number Publication Date
JPS57147237A true JPS57147237A (en) 1982-09-11
JPH0377657B2 JPH0377657B2 (nl) 1991-12-11

Family

ID=12355388

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3231181A Granted JPS57147237A (en) 1981-03-06 1981-03-06 Heat treatment device

Country Status (1)

Country Link
JP (1) JPS57147237A (nl)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5826482A (ja) * 1981-08-08 1983-02-16 真空理工株式会社 赤外線加熱装置
JPS58220423A (ja) * 1982-06-16 1983-12-22 Kokusai Electric Co Ltd 半導体基板の連続熱処理方法および装置
JPS5958937U (ja) * 1982-10-12 1984-04-17 富士通株式会社 熱処理装置
JPS59101825A (ja) * 1982-12-02 1984-06-12 Matsushita Electric Ind Co Ltd 半導体装置の製造方法および熱処理装置
JPS59161636U (ja) * 1983-03-17 1984-10-29 ウシオ電機株式会社 光照射炉の被処理物移動器
JPS59215718A (ja) * 1983-05-23 1984-12-05 Kokusai Electric Co Ltd 半導体基板の赤外線熱処理装置
JPS6045012A (ja) * 1983-08-23 1985-03-11 Toshiba Corp 短時間熱処理装置
JPS6072227A (ja) * 1983-08-29 1985-04-24 バリアン・アソシエイツ・インコ−ポレイテツド 半導体ウエフア中へド−パントを高温ドライブイン拡散する方法
US4678432A (en) * 1984-11-26 1987-07-07 Dainippon Screen Mfg. Co., Ltd. Heat treatment method
JP2008226934A (ja) * 2007-03-09 2008-09-25 Tokyo Electron Ltd 基板処理装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5437257U (nl) * 1977-08-18 1979-03-10
JPS5575224A (en) * 1978-12-01 1980-06-06 Ushio Inc Annealing furnace
JPS56108231A (en) * 1980-02-01 1981-08-27 Ushio Inc Annealing method of semiconductor wafer

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5437257U (nl) * 1977-08-18 1979-03-10
JPS5575224A (en) * 1978-12-01 1980-06-06 Ushio Inc Annealing furnace
JPS56108231A (en) * 1980-02-01 1981-08-27 Ushio Inc Annealing method of semiconductor wafer

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5826482A (ja) * 1981-08-08 1983-02-16 真空理工株式会社 赤外線加熱装置
JPS58220423A (ja) * 1982-06-16 1983-12-22 Kokusai Electric Co Ltd 半導体基板の連続熱処理方法および装置
JPS5958937U (ja) * 1982-10-12 1984-04-17 富士通株式会社 熱処理装置
JPS59101825A (ja) * 1982-12-02 1984-06-12 Matsushita Electric Ind Co Ltd 半導体装置の製造方法および熱処理装置
JPS59161636U (ja) * 1983-03-17 1984-10-29 ウシオ電機株式会社 光照射炉の被処理物移動器
JPS59215718A (ja) * 1983-05-23 1984-12-05 Kokusai Electric Co Ltd 半導体基板の赤外線熱処理装置
JPS6045012A (ja) * 1983-08-23 1985-03-11 Toshiba Corp 短時間熱処理装置
JPS6072227A (ja) * 1983-08-29 1985-04-24 バリアン・アソシエイツ・インコ−ポレイテツド 半導体ウエフア中へド−パントを高温ドライブイン拡散する方法
US4678432A (en) * 1984-11-26 1987-07-07 Dainippon Screen Mfg. Co., Ltd. Heat treatment method
JP2008226934A (ja) * 2007-03-09 2008-09-25 Tokyo Electron Ltd 基板処理装置

Also Published As

Publication number Publication date
JPH0377657B2 (nl) 1991-12-11

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