JPS644244A - High temperature reaction treatment device - Google Patents
High temperature reaction treatment deviceInfo
- Publication number
- JPS644244A JPS644244A JP15552487A JP15552487A JPS644244A JP S644244 A JPS644244 A JP S644244A JP 15552487 A JP15552487 A JP 15552487A JP 15552487 A JP15552487 A JP 15552487A JP S644244 A JPS644244 A JP S644244A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- treatment
- high temperature
- heat plate
- reactive compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
PURPOSE:To enable a suitable service for a treatment with a silicon compound, by furnishing with a reactor which is able to be sealed tightly and in which multiple holes for introducing a reactive compound onto a substrate and both upper and lower hot plates for keeping the substrate at a high temperature are arranged. CONSTITUTION:A substrate 5 on which an irradiated resin layer has been formed by a radiation exposure treatment is set upon a lower heat plate 3 heated to a high temperature of a reactor 1. An upper heat plate 2 is put above that substrate as a lid, a reactive compound is introduced on to the substrate 5 through holes 6 bored through the upper heat plate 2 and the aforementioned irradiated resin layer is treated by a reaction. As a result of these procedure, an ultra fine processing with a resolution of 1.0mum or smaller can be precisely performed in a short time by combining a radiation exposure treatment, a treatment with a reactive compound composed of a silicon compound and a dry developing treatment.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62155524A JPH0811178B2 (en) | 1987-06-24 | 1987-06-24 | High temperature reaction processor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62155524A JPH0811178B2 (en) | 1987-06-24 | 1987-06-24 | High temperature reaction processor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS644244A true JPS644244A (en) | 1989-01-09 |
JPH0811178B2 JPH0811178B2 (en) | 1996-02-07 |
Family
ID=15607949
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62155524A Expired - Fee Related JPH0811178B2 (en) | 1987-06-24 | 1987-06-24 | High temperature reaction processor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0811178B2 (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5935674A (en) * | 1982-08-24 | 1984-02-27 | Sumitomo Electric Ind Ltd | Vapor deposition device |
JPS6126775A (en) * | 1984-07-16 | 1986-02-06 | Canon Inc | Formation of accumulated film |
-
1987
- 1987-06-24 JP JP62155524A patent/JPH0811178B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5935674A (en) * | 1982-08-24 | 1984-02-27 | Sumitomo Electric Ind Ltd | Vapor deposition device |
JPS6126775A (en) * | 1984-07-16 | 1986-02-06 | Canon Inc | Formation of accumulated film |
Also Published As
Publication number | Publication date |
---|---|
JPH0811178B2 (en) | 1996-02-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |