JPS57191639A - Dry developing method and device - Google Patents

Dry developing method and device

Info

Publication number
JPS57191639A
JPS57191639A JP7654081A JP7654081A JPS57191639A JP S57191639 A JPS57191639 A JP S57191639A JP 7654081 A JP7654081 A JP 7654081A JP 7654081 A JP7654081 A JP 7654081A JP S57191639 A JPS57191639 A JP S57191639A
Authority
JP
Japan
Prior art keywords
region
substrate
film
irradiated
ultraviolet rays
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7654081A
Other languages
Japanese (ja)
Inventor
Yoshimichi Hirobe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7654081A priority Critical patent/JPS57191639A/en
Publication of JPS57191639A publication Critical patent/JPS57191639A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To prevent a titled device from being affected with an accelerated ion and electron caused by a high frequency electric field, by treating a mask pattern for dry development in a gaseous ozone atmosphere after transferring said mask pattern to a photosensitive resin film on a substrate when a fine pattern is formed on a semiconductor substrate. CONSTITUTION:A photosensitive resin film 10 for ultraviolet rays is applied and formed on a semiconductive substrate 9 consisting of e.g. Si, and a pattern 12 of a mask 11 is transferred to the film 10 by irradiating ultraviolet rays 13 after baking treatment. A region 14 irradiated with ultraviolet rays 13 and a region 15 not irradiated are formed on the film 10. Then, the substrate 9 is placed on a jig 20 in a reacting vessel 16 and gaseous ozone generated in a gas generating device 17 is conducted into a vessel 16 via a gas supplying device 18. The gaseous ozone after reaction is discharged from a discharging device 19. By such a way, the region 15 is oxidized and only the region 15 remains on the substrate 9 and a contrast between the region 14 and 15 may be enlarged. As a resin film, a film irradiated with infrared rays is used.
JP7654081A 1981-05-22 1981-05-22 Dry developing method and device Pending JPS57191639A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7654081A JPS57191639A (en) 1981-05-22 1981-05-22 Dry developing method and device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7654081A JPS57191639A (en) 1981-05-22 1981-05-22 Dry developing method and device

Publications (1)

Publication Number Publication Date
JPS57191639A true JPS57191639A (en) 1982-11-25

Family

ID=13608095

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7654081A Pending JPS57191639A (en) 1981-05-22 1981-05-22 Dry developing method and device

Country Status (1)

Country Link
JP (1) JPS57191639A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61194661A (en) * 1985-02-22 1986-08-29 Matsushita Electric Ind Co Ltd Formation of projection and recess pattern
JPS63250125A (en) * 1987-04-06 1988-10-18 Nec Yamagata Ltd Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61194661A (en) * 1985-02-22 1986-08-29 Matsushita Electric Ind Co Ltd Formation of projection and recess pattern
JPS63250125A (en) * 1987-04-06 1988-10-18 Nec Yamagata Ltd Manufacture of semiconductor device

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