JPS61174630A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS61174630A JPS61174630A JP1708485A JP1708485A JPS61174630A JP S61174630 A JPS61174630 A JP S61174630A JP 1708485 A JP1708485 A JP 1708485A JP 1708485 A JP1708485 A JP 1708485A JP S61174630 A JPS61174630 A JP S61174630A
- Authority
- JP
- Japan
- Prior art keywords
- oxygen
- ion beam
- resist
- ashing
- photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000004065 semiconductor Substances 0.000 title claims description 7
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 12
- 239000001301 oxygen Substances 0.000 claims abstract description 12
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 238000004380 ashing Methods 0.000 claims abstract description 4
- 150000002500 ions Chemical class 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims 1
- 238000011161 development Methods 0.000 abstract description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 abstract description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 4
- 238000005530 etching Methods 0.000 abstract description 4
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 4
- 239000001257 hydrogen Substances 0.000 abstract description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052799 carbon Inorganic materials 0.000 abstract description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 abstract description 2
- 239000001569 carbon dioxide Substances 0.000 abstract description 2
- 150000001875 compounds Chemical class 0.000 abstract description 2
- 239000000470 constituent Substances 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 230000001678 irradiating effect Effects 0.000 abstract 3
- 239000002253 acid Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- SEPPVOUBHWNCAW-FNORWQNLSA-N (E)-4-oxonon-2-enal Chemical compound CCCCCC(=O)\C=C\C=O SEPPVOUBHWNCAW-FNORWQNLSA-N 0.000 description 1
- LLBZPESJRQGYMB-UHFFFAOYSA-N 4-one Natural products O1C(C(=O)CC)CC(C)C11C2(C)CCC(C3(C)C(C(C)(CO)C(OC4C(C(O)C(O)C(COC5C(C(O)C(O)CO5)OC5C(C(OC6C(C(O)C(O)C(CO)O6)O)C(O)C(CO)O5)OC5C(C(O)C(O)C(C)O5)O)O4)O)CC3)CC3)=C3C2(C)CC1 LLBZPESJRQGYMB-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electron Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
′〔産業上の利用分野〕
この発明はホトレジストのパターニングを集束イオンと
一ムを走査して行うＩＣ等半導体装置の製造方法に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing semiconductor devices such as ICs, in which patterning of photoresist is performed by scanning the pattern with focused ions.
集束イオンビームを用いてホトレジスタ上に微細なパタ
ーンを形成するパターニンク方法は、マスクレスで行え
るという利点がある。The patterning method, in which a fine pattern is formed on a photoresist using a focused ion beam, has the advantage that it can be performed without a mask.
しかし、従来は、第２図（ａ）に示すように、ベリリウ
ムＢｅ 等をビーム種とする集束イオンビーム１を基
板３上に塗布されたホトレジスト２に照射するようにし
ているので、ホトレジスト２中にできた潜像を、現像液
を使用して、第２図（ｂ）に示すようにレジストパター
ンＰに変える必要があり、紫外線照射の場合と同様エツ
チング工程に現像工程を必要とする欠点があった。However, conventionally, as shown in FIG. 2(a), the photoresist 2 coated on the substrate 3 is irradiated with a focused ion beam 1 made of beryllium Be or the like. It is necessary to use a developer to convert the latent image formed into a resist pattern P as shown in FIG. there were.
この発明は上記欠点を除去するためになされたもので、
現像工程を不要としエツチング工程を従来に比して短縮
することができる半導体装置の製造方法を得ることを目
的とする。This invention was made to eliminate the above-mentioned drawbacks.
It is an object of the present invention to provide a method for manufacturing a semiconductor device that does not require a developing step and can shorten the etching step compared to the conventional method.
この発明は上記目的を達成するため、イオンビーム種と
して酸素もしくはクラスター状の酸素を用い、イオンビ
ーム照射領域を灰化するようにしたものである。In order to achieve the above object, the present invention uses oxygen or clustered oxygen as the ion beam species to incinerate the ion beam irradiation area.
この発明においては、集束イオンビームの照射領域が揮
発性物質となってレジストパターンが形成される。In this invention, a resist pattern is formed by turning the irradiated region of the focused ion beam into a volatile substance.
第１図はこの発明の一実施例を説明するための図であっ
て、集束イオンビーム４として、酸素またはクラスター
状の酸素を使用する。FIG. 1 is a diagram for explaining one embodiment of the present invention, in which oxygen or clustered oxygen is used as the focused ion beam 4. In FIG.
この方法によれば、ホトレジスト２上のビーム照射領域
５では、高分子化合物であるホトレジスト２の炭素、水
素等の構成元素が酸化されて、水素や二酸化炭素等の揮
発性物質に変化し、照射領域５が灰化することにより、
直接レジストパターンが形成されるので、従来、ビーム
照射後に行われていた現像、熱処理、エツチング、レジ
スト剥離の工程のうち現像工程を省くことができる。According to this method, in the beam irradiation area 5 on the photoresist 2, constituent elements such as carbon and hydrogen of the photoresist 2, which is a polymer compound, are oxidized and changed into volatile substances such as hydrogen and carbon dioxide, and the irradiation By ashing area 5,
Since a resist pattern is directly formed, the development step can be omitted among the steps of development, heat treatment, etching, and resist peeling that are conventionally performed after beam irradiation.
なお、本発明を実施する場合、基板３の置かれている雰
囲気を、酸素もしくはオゾン等の酸性雰囲気とすること
が好ましい。Note that when carrying out the present invention, it is preferable that the atmosphere in which the substrate 3 is placed be an acidic atmosphere such as oxygen or ozone.
この発明は以上説明した通り、イオンビームの照射によ
り直接レジストパターンを形成することができるので、
その後の現像工程を不要にすることができ、それだけ半
導体装置の製造工程を簡単にすることができる。As explained above, this invention allows the formation of a resist pattern directly by ion beam irradiation.
The subsequent development step can be made unnecessary, and the manufacturing process of the semiconductor device can be simplified accordingly.
第１図はこの発明の一実施例を説明するための図、第２
図（ａ）及び（ｂ）は従来のホトエツチング工程を説明
するため図である。
図において、２−・ホトレジスト、３−・基板、４−−
−−一集束イオンビーム。
なお、図中、同一符号は同一または相当部分を示す。FIG. 1 is a diagram for explaining one embodiment of the present invention, and FIG.
Figures (a) and (b) are diagrams for explaining a conventional photoetching process. In the figure, 2--photoresist, 3--substrate, 4--
--One focused ion beam. In addition, in the figures, the same reference numerals indicate the same or corresponding parts.
Claims (2)
ホトレジスタのパターニングを行う半導体装置の製造方
法において、集束イオンビームのイオン種として、酸素
またはクラスター状の酸素を使用し、上記ホトレジスタ
のイオンビームが照射領域を灰化することによりパター
ニングすることを特徴とする半導体装置の製造方法。(1) In a semiconductor device manufacturing method in which a photoresist coated on a substrate is patterned by scanning a focused ion beam, oxygen or clustered oxygen is used as the ion species of the focused ion beam, and the ions of the photoresist are 1. A method for manufacturing a semiconductor device, characterized in that patterning is performed by ashing an irradiated area with a beam.
とする特許請求の範囲第１項記載の半導体装置の製造方
法。(2) The method for manufacturing a semiconductor device according to claim 1, wherein the substrate is placed in an oxidizing atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1708485A JPS61174630A (en) | 1985-01-29 | 1985-01-29 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1708485A JPS61174630A (en) | 1985-01-29 | 1985-01-29 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61174630A true JPS61174630A (en) | 1986-08-06 |
Family
ID=11934112
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1708485A Pending JPS61174630A (en) | 1985-01-29 | 1985-01-29 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61174630A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0246719A (en) * | 1988-08-09 | 1990-02-16 | Nec Corp | Formation of pattern |
| US7218476B2 (en) | 1999-02-23 | 2007-05-15 | Advanced Research Corporation | Magnetic media having a servo track written with a patterned magnetic recording head |
| US7386934B2 (en) | 1999-02-23 | 2008-06-17 | Advanced Research Corporation | Double layer patterning and technique for milling patterns for a servo recording head |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5680131A (en) * | 1979-12-05 | 1981-07-01 | Nec Corp | Method and device for ion beam etching |
| JPS57183036A (en) * | 1981-05-06 | 1982-11-11 | Nec Corp | Formation of mask pattern |
-
1985
- 1985-01-29 JP JP1708485A patent/JPS61174630A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5680131A (en) * | 1979-12-05 | 1981-07-01 | Nec Corp | Method and device for ion beam etching |
| JPS57183036A (en) * | 1981-05-06 | 1982-11-11 | Nec Corp | Formation of mask pattern |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0246719A (en) * | 1988-08-09 | 1990-02-16 | Nec Corp | Formation of pattern |
| US7218476B2 (en) | 1999-02-23 | 2007-05-15 | Advanced Research Corporation | Magnetic media having a servo track written with a patterned magnetic recording head |
| US7386934B2 (en) | 1999-02-23 | 2008-06-17 | Advanced Research Corporation | Double layer patterning and technique for milling patterns for a servo recording head |
| US7426093B2 (en) | 1999-02-23 | 2008-09-16 | Advanced Research Corporation | Magnetic media having a non timing based servo track written with a patterned magnetic recording head and process for making the same |
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