JPS57183036A - Formation of mask pattern - Google Patents

Formation of mask pattern

Info

Publication number
JPS57183036A
JPS57183036A JP6797181A JP6797181A JPS57183036A JP S57183036 A JPS57183036 A JP S57183036A JP 6797181 A JP6797181 A JP 6797181A JP 6797181 A JP6797181 A JP 6797181A JP S57183036 A JPS57183036 A JP S57183036A
Authority
JP
Japan
Prior art keywords
pattern
layer
organic
mask pattern
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6797181A
Other languages
Japanese (ja)
Inventor
Hiroshi Gokan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6797181A priority Critical patent/JPS57183036A/en
Publication of JPS57183036A publication Critical patent/JPS57183036A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To form a highly accurate super microscopic pattern on a substrate having a roughened surface by a method wherein an organic layer, with which a mask pattern will be formed, is formed on a substrate, and a mask pattern consisting of organic material is formed on the above of the organic layer. CONSTITUTION:On the roughened substrate 1, an organic layer 2, whereon the mask pattern is expected to be formed, is coated, a layer 3 of organic material sensitive to a particle beam or radioactive rays is covered on the organic layer 2, and a pattern is formed on the layer 3. Thus, when different kinds of organic materials are applied on two layers, the film of the upper layer 3 is formed almost uniformly irrespective of stepped sections, and the pattern which displays the resolution originally possessed by the material can be formed. Then, the pattern of organic material 2 can be obtained by irradiating an oxygen-ion beam on the whole surface of the sample.
JP6797181A 1981-05-06 1981-05-06 Formation of mask pattern Pending JPS57183036A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6797181A JPS57183036A (en) 1981-05-06 1981-05-06 Formation of mask pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6797181A JPS57183036A (en) 1981-05-06 1981-05-06 Formation of mask pattern

Publications (1)

Publication Number Publication Date
JPS57183036A true JPS57183036A (en) 1982-11-11

Family

ID=13360374

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6797181A Pending JPS57183036A (en) 1981-05-06 1981-05-06 Formation of mask pattern

Country Status (1)

Country Link
JP (1) JPS57183036A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61174630A (en) * 1985-01-29 1986-08-06 Mitsubishi Electric Corp Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61174630A (en) * 1985-01-29 1986-08-06 Mitsubishi Electric Corp Manufacture of semiconductor device

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