JPS57143877A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57143877A
JPS57143877A JP56030149A JP3014981A JPS57143877A JP S57143877 A JPS57143877 A JP S57143877A JP 56030149 A JP56030149 A JP 56030149A JP 3014981 A JP3014981 A JP 3014981A JP S57143877 A JPS57143877 A JP S57143877A
Authority
JP
Japan
Prior art keywords
region
emitter
diffusion
base region
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56030149A
Other languages
English (en)
Inventor
Motoaki Takaoka
Osamu Asano
Yoshikazu Yama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omron Corp
Original Assignee
Tateisi Electronics Co
Omron Tateisi Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tateisi Electronics Co, Omron Tateisi Electronics Co filed Critical Tateisi Electronics Co
Priority to JP56030149A priority Critical patent/JPS57143877A/ja
Publication of JPS57143877A publication Critical patent/JPS57143877A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/11Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors
    • H01L31/1105Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors the device being a bipolar phototransistor

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
JP56030149A 1981-03-02 1981-03-02 Semiconductor device Pending JPS57143877A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56030149A JPS57143877A (en) 1981-03-02 1981-03-02 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56030149A JPS57143877A (en) 1981-03-02 1981-03-02 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57143877A true JPS57143877A (en) 1982-09-06

Family

ID=12295703

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56030149A Pending JPS57143877A (en) 1981-03-02 1981-03-02 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57143877A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01102971A (ja) * 1987-10-16 1989-04-20 Seiko Instr & Electron Ltd イメージセンサ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01102971A (ja) * 1987-10-16 1989-04-20 Seiko Instr & Electron Ltd イメージセンサ

Similar Documents

Publication Publication Date Title
JPS5522840A (en) Semiconductor switching element and manufacturing method thereof
GB1073749A (en) Improvements in or relating to semiconductor electromechanical transducers
GB871307A (en) Transistor with double collector
GB1530168A (en) Semiconductor device of the planar epitaxial type
GB1169188A (en) Method of Manufacturing Semiconductor Devices
GB1160086A (en) Semiconductor Devices and methods of making them
GB1100627A (en) Power transistor
JPS57143877A (en) Semiconductor device
JPS5478092A (en) Lateral semiconductor device
JPS5473585A (en) Gate turn-off thyristor
JPS55123161A (en) Darlington-connection semiconductor device
JPS5548958A (en) Semiconductor device
GB812550A (en) Improvements in or relating to semiconductor signal translating devices
US3736478A (en) Radio frequency transistor employing high and low-conductivity base grids
GB1182324A (en) Improvements in or relating to Semiconductor Matrices
GB903919A (en) Semiconductor devices
GB1127161A (en) Improvements in or relating to diffused base transistors
US4695862A (en) Semiconductor apparatus
JPS5615068A (en) Semiconductor device and manufacture thereof
GB1468378A (en) Method for manufacturing a transistor
JPS6431452A (en) Semiconductor integrated circuit containing current mirror
US4249192A (en) Monolithic integrated semiconductor diode arrangement
GB1007952A (en) Improvements in and relating to semi-conductor devices
GB1249812A (en) Improvements relating to semiconductor devices
JPS6482560A (en) Lateral bipolar transistor